{"type":"conference","year":"2017","conference":{"name":"E-MRS Fall Meeting 2017","end_date":"2017-09-21","location":"Warsaq (Poland)","start_date":"2017-09-18"},"date_updated":"2022-01-06T07:00:04Z","user_id":"55706","_id":"3987","date_created":"2018-08-21T11:35:05Z","language":[{"iso":"eng"}],"title":"Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography","author":[{"first_name":"Thomas","id":"36950","full_name":"Riedl, Thomas","last_name":"Riedl"},{"last_name":"Kunnathully","full_name":"Kunnathully, Vinay ","first_name":"Vinay "},{"first_name":"A.","last_name":"Karlisch","full_name":"Karlisch, A."},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"}],"citation":{"chicago":"Riedl, Thomas, Vinay  Kunnathully, A. Karlisch, Dirk Reuter, and Jörg Lindner. “Group III Arsenide Heteroepitaxy on Si(111) Using SiNx Nanohole Masks Patterned by Nanosphere Lithography,” 2017.","ieee":"T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, and J. Lindner, “Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaq (Poland), 2017.","bibtex":"@inproceedings{Riedl_Kunnathully_Karlisch_Reuter_Lindner_2017, title={Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography}, author={Riedl, Thomas and Kunnathully, Vinay  and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}, year={2017} }","ama":"Riedl T, Kunnathully V, Karlisch A, Reuter D, Lindner J. Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography. In: ; 2017.","mla":"Riedl, Thomas, et al. <i>Group III Arsenide Heteroepitaxy on Si(111) Using SiNx Nanohole Masks Patterned by Nanosphere Lithography</i>. 2017.","apa":"Riedl, T., Kunnathully, V., Karlisch, A., Reuter, D., &#38; Lindner, J. (2017). Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaq (Poland).","short":"T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, J. Lindner, in: 2017."},"status":"public","publication_status":"published","department":[{"_id":"292"},{"_id":"286"},{"_id":"15"}]}