conference paper published Thomas Riedl author 36950 Vinay Kunnathully author A. Karlisch author Dirk Reuter author 37763 Jörg Lindner author 20797 292 department 286 department 15 department E-MRS Fall Meeting 2017 2017Warsaq (Poland) eng Riedl, Thomas, Vinay Kunnathully, A. Karlisch, Dirk Reuter, and Jörg Lindner. “Group III Arsenide Heteroepitaxy on Si(111) Using SiNx Nanohole Masks Patterned by Nanosphere Lithography,” 2017. T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, J. Lindner, in: 2017. Riedl T, Kunnathully V, Karlisch A, Reuter D, Lindner J. Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography. In: ; 2017. @inproceedings{Riedl_Kunnathully_Karlisch_Reuter_Lindner_2017, title={Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography}, author={Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}, year={2017} } Riedl, Thomas, et al. <i>Group III Arsenide Heteroepitaxy on Si(111) Using SiNx Nanohole Masks Patterned by Nanosphere Lithography</i>. 2017. Riedl, T., Kunnathully, V., Karlisch, A., Reuter, D., &#38; Lindner, J. (2017). Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography. Presented at the E-MRS Fall Meeting 2017, Warsaq (Poland). T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, and J. Lindner, “Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaq (Poland), 2017. 39872018-08-21T11:35:05Z2022-01-06T07:00:04Z