A structure definition technique for 25 nm lines of silicon and related materials

article A structure definition technique for 25 nm lines of silicon and related materials published Ulrich Hilleringmann author 20179 T. Vieregge author J.T. Horstmann author 59 department Elsevier BV2002 eng Electrical and Electronic EngineeringSurfacesCoatings and FilmsCondensed Matter PhysicsAtomic and Molecular Physicsand OpticsElectronicOptical and Magnetic Materials Microelectronic Engineering 0167-931710.1016/s0167-9317(00)00380-4 531-4569-572 U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” Microelectronic Engineering, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>. Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” Microelectronic Engineering 53, no. 1–4 (2002): 569–72. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>. Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering. 2002;53(1-4):569-572. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a> Hilleringmann, U., Vieregge, T., & Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. Microelectronic Engineering, 53(1–4), 569–572. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a> @article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} } U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572. Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” Microelectronic Engineering, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>. 398772023-01-25T09:08:13Z2023-03-21T10:03:00Z