{"volume":53,"publication_status":"published","user_id":"20179","title":"1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","status":"public","author":[{"full_name":"Horstmann, J.T.","first_name":"J.T.","last_name":"Horstmann"},{"full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich","last_name":"Hilleringmann"},{"full_name":"Goser, K.","first_name":"K.","last_name":"Goser"}],"page":"213-216","publisher":"Elsevier BV","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"doi":"10.1016/s0167-9317(00)00299-9","issue":"1-4","type":"journal_article","date_updated":"2023-03-21T10:02:46Z","intvolume":"        53","publication":"Microelectronic Engineering","date_created":"2023-01-25T09:08:36Z","publication_identifier":{"issn":["0167-9317"]},"language":[{"iso":"eng"}],"citation":{"ama":"Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>. 2002;53(1-4):213-216. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.","mla":"Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }"},"year":"2002","_id":"39879"}