{"title":"Matching analysis of NMOS-transistors with a channel length down to 30 nm","date_updated":"2023-03-21T09:58:50Z","user_id":"20179","type":"conference","author":[{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"id":"20179","first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich"},{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."}],"status":"public","date_created":"2023-01-25T09:12:46Z","publisher":"IEEE","publication":"IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)","_id":"39888","year":"2003","citation":{"ama":"Horstmann JT, Hilleringmann U, Goser K. Matching analysis of NMOS-transistors with a channel length down to 30 nm. In: <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE; 2003. doi:<a href=\"https://doi.org/10.1109/iecon.1999.822163\">10.1109/iecon.1999.822163</a>","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2003). Matching analysis of NMOS-transistors with a channel length down to 30 nm. <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. <a href=\"https://doi.org/10.1109/iecon.1999.822163\">https://doi.org/10.1109/iecon.1999.822163</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Matching analysis of NMOS-transistors with a channel length down to 30 nm,” 2003, doi: <a href=\"https://doi.org/10.1109/iecon.1999.822163\">10.1109/iecon.1999.822163</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003.","bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_2003, title={Matching analysis of NMOS-transistors with a channel length down to 30 nm}, DOI={<a href=\"https://doi.org/10.1109/iecon.1999.822163\">10.1109/iecon.1999.822163</a>}, booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2003} }","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Matching Analysis of NMOS-Transistors with a Channel Length down to 30 Nm.” In <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE, 2003. <a href=\"https://doi.org/10.1109/iecon.1999.822163\">https://doi.org/10.1109/iecon.1999.822163</a>.","mla":"Horstmann, J. T., et al. “Matching Analysis of NMOS-Transistors with a Channel Length down to 30 Nm.” <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>, IEEE, 2003, doi:<a href=\"https://doi.org/10.1109/iecon.1999.822163\">10.1109/iecon.1999.822163</a>."},"language":[{"iso":"eng"}],"doi":"10.1109/iecon.1999.822163","department":[{"_id":"59"}],"publication_status":"published"}