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   	<dc:title>Matching analysis of deposition defined 50-nm MOSFET&apos;s</dc:title>
   	<dc:creator>Horstmann, J.T.</dc:creator>
   	<dc:creator>Hilleringmann, Ulrich</dc:creator>
   	<dc:creator>Goser, K.F.</dc:creator>
   	<dc:subject>Electrical and Electronic Engineering</dc:subject>
   	<dc:subject>Electronic</dc:subject>
   	<dc:subject>Optical and Magnetic Materials</dc:subject>
   	<dc:publisher>Institute of Electrical and Electronics Engineers (IEEE)</dc:publisher>
   	<dc:date>2002</dc:date>
   	<dc:type>info:eu-repo/semantics/article</dc:type>
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   	<dc:identifier>https://ris.uni-paderborn.de/record/39891</dc:identifier>
   	<dc:source>Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. &lt;i&gt;IEEE Transactions on Electron Devices&lt;/i&gt;. 2002;45(1):299-306. doi:&lt;a href=&quot;https://doi.org/10.1109/16.658845&quot;&gt;10.1109/16.658845&lt;/a&gt;</dc:source>
   	<dc:language>eng</dc:language>
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