{"user_id":"20179","language":[{"iso":"eng"}],"department":[{"_id":"59"}],"page":"512-515","date_created":"2023-01-25T09:15:49Z","status":"public","citation":{"ama":"Horstmann JT, Hilleringmann U, Goser K. Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors. In: <i>28th European Solid-State Device Research Conference</i>. ; 1998:512-515.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors,” in <i>28th European Solid-State Device Research Conference</i>, 1998, pp. 512–515.","mla":"Horstmann, J. T., et al. “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.” <i>28th European Solid-State Device Research Conference</i>, 1998, pp. 512–15.","bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_1998, title={Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors}, booktitle={28th European Solid-State Device Research Conference}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={1998}, pages={512–515} }","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State Device Research Conference, 1998, pp. 512–515.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 Nm MOS-Transistors.” In <i>28th European Solid-State Device Research Conference</i>, 512–15, 1998.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (1998). Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors. <i>28th European Solid-State Device Research Conference</i>, 512–515."},"author":[{"last_name":"Horstmann","first_name":"J.T.","full_name":"Horstmann, J.T."},{"full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich","last_name":"Hilleringmann"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"title":"Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors","type":"conference","publication":"28th European Solid-State Device Research Conference","_id":"39893","date_updated":"2023-03-21T09:57:47Z","year":"1998"}