{"page":"431-434","year":"2002","publication":"Microelectronic Engineering","department":[{"_id":"59"}],"publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"user_id":"20179","date_created":"2023-01-25T09:20:20Z","status":"public","doi":"10.1016/0167-9317(95)00280-4","intvolume":"        30","_id":"39899","title":"Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique","author":[{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"last_name":"Goser","first_name":"K.","full_name":"Goser, K."}],"citation":{"chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>","ama":"Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>. 2002;30(1-4):431-434. doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>","mla":"Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>."},"volume":30,"issue":"1-4","language":[{"iso":"eng"}],"publisher":"Elsevier BV","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"date_updated":"2023-03-21T09:53:55Z","type":"journal_article"}