{"doi":"10.1016/0167-9317(93)90092-j","publication":"Microelectronic Engineering","citation":{"chicago":"Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i> 21, no. 1–4 (2002): 363–66. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>.","ieee":"I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","apa":"Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>, <i>21</i>(1–4), 363–366. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>","ama":"Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>. 2002;21(1-4):363-366. doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>","bibtex":"@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }","short":"I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.","mla":"Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>."},"author":[{"first_name":"I.","full_name":"Schönstein, I.","last_name":"Schönstein"},{"full_name":"Müller, J.","last_name":"Müller","first_name":"J."},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","id":"20179","first_name":"Ulrich"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"department":[{"_id":"59"}],"publisher":"Elsevier BV","publication_identifier":{"issn":["0167-9317"]},"issue":"1-4","volume":21,"status":"public","date_updated":"2023-03-21T09:50:03Z","date_created":"2023-01-25T09:26:21Z","intvolume":"        21","page":"363-366","_id":"39912","publication_status":"published","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","type":"journal_article","language":[{"iso":"eng"}],"title":"Characterization of submicron NMOS devices due to visible light emission","year":"2002"}