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<titleInfo><title>Characterization of submicron NMOS devices due to visible light emission</title></titleInfo>


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  <namePart type="given">I.</namePart>
  <namePart type="family">Schönstein</namePart>
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  <namePart type="given">J.</namePart>
  <namePart type="family">Müller</namePart>
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  <namePart type="given">Ulrich</namePart>
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  <role><roleTerm type="text">author</roleTerm> </role><identifier type="local">20179</identifier></name>
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  <namePart type="given">K.</namePart>
  <namePart type="family">Goser</namePart>
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<originInfo><publisher>Elsevier BV</publisher><dateIssued encoding="w3cdtf">2002</dateIssued>
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<language><languageTerm authority="iso639-2b" type="code">eng</languageTerm>
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<subject><topic>Electrical and Electronic Engineering</topic><topic>Surfaces</topic><topic>Coatings and Films</topic><topic>Condensed Matter Physics</topic><topic>Atomic and Molecular Physics</topic><topic>and Optics</topic><topic>Electronic</topic><topic>Optical and Magnetic Materials</topic>
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<relatedItem type="host"><titleInfo><title>Microelectronic Engineering</title></titleInfo>
  <identifier type="issn">0167-9317</identifier><identifier type="doi">10.1016/0167-9317(93)90092-j</identifier>
<part><detail type="volume"><number>21</number></detail><detail type="issue"><number>1-4</number></detail><extent unit="pages">363-366</extent>
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<bibtex>@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={&lt;a href=&quot;https://doi.org/10.1016/0167-9317(93)90092-j&quot;&gt;10.1016/0167-9317(93)90092-j&lt;/a&gt;}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }</bibtex>
<mla>Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” &lt;i&gt;Microelectronic Engineering&lt;/i&gt;, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:&lt;a href=&quot;https://doi.org/10.1016/0167-9317(93)90092-j&quot;&gt;10.1016/0167-9317(93)90092-j&lt;/a&gt;.</mla>
<short>I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.</short>
<apa>Schönstein, I., Müller, J., Hilleringmann, U., &amp;#38; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. &lt;i&gt;Microelectronic Engineering&lt;/i&gt;, &lt;i&gt;21&lt;/i&gt;(1–4), 363–366. &lt;a href=&quot;https://doi.org/10.1016/0167-9317(93)90092-j&quot;&gt;https://doi.org/10.1016/0167-9317(93)90092-j&lt;/a&gt;</apa>
<ama>Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. &lt;i&gt;Microelectronic Engineering&lt;/i&gt;. 2002;21(1-4):363-366. doi:&lt;a href=&quot;https://doi.org/10.1016/0167-9317(93)90092-j&quot;&gt;10.1016/0167-9317(93)90092-j&lt;/a&gt;</ama>
<chicago>Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” &lt;i&gt;Microelectronic Engineering&lt;/i&gt; 21, no. 1–4 (2002): 363–66. &lt;a href=&quot;https://doi.org/10.1016/0167-9317(93)90092-j&quot;&gt;https://doi.org/10.1016/0167-9317(93)90092-j&lt;/a&gt;.</chicago>
<ieee>I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” &lt;i&gt;Microelectronic Engineering&lt;/i&gt;, vol. 21, no. 1–4, pp. 363–366, 2002, doi: &lt;a href=&quot;https://doi.org/10.1016/0167-9317(93)90092-j&quot;&gt;10.1016/0167-9317(93)90092-j&lt;/a&gt;.</ieee>
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