[{"status":"public","publication":"Microelectronic Engineering","type":"journal_article","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39920","intvolume":"        15","page":"633-636","citation":{"ama":"Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>. 2002;15(1-4):633-636. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>","chicago":"Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>.","ieee":"A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","bibtex":"@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }","mla":"Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","short":"A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.","apa":"Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>"},"year":"2002","issue":"1-4","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","doi":"10.1016/0167-9317(91)90299-s","title":"Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica","volume":15,"author":[{"first_name":"A.","full_name":"Soennecken, A.","last_name":"Soennecken"},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"date_created":"2023-01-25T09:29:53Z","date_updated":"2023-03-21T09:47:17Z","publisher":"Elsevier BV"}]