{"department":[{"_id":"286"},{"_id":"15"}],"date_updated":"2022-01-06T07:00:07Z","author":[{"full_name":"Rieger, T.","last_name":"Rieger","first_name":"T."},{"id":"36950","full_name":"Riedl, Thomas","first_name":"Thomas","last_name":"Riedl"},{"first_name":"Jörg","last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg"},{"full_name":"Pawlis, A.","last_name":"Pawlis","first_name":"A."}],"language":[{"iso":"eng"}],"date_created":"2018-08-21T12:42:48Z","status":"public","user_id":"55706","citation":{"bibtex":"@article{Rieger_Riedl_Lindner_Pawlis_2016, series={poster Mo-P-8}, title={Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique}, author={Rieger, T. and Riedl, Thomas and Lindner, Jörg and Pawlis, A.}, year={2016}, collection={poster Mo-P-8} }","chicago":"Rieger, T., Thomas Riedl, Jörg Lindner, and A. Pawlis. “Enhancement of the Critical Thickness of CdSe/ZnSe Quantum Wells via the Strain Compensation Technique.” Poster Mo-P-8, 2016.","apa":"Rieger, T., Riedl, T., Lindner, J., & Pawlis, A. (2016). Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique. Presented at the 19th International Conference on Molecular Beam Epitaxy, Montpellier (France).","ama":"Rieger T, Riedl T, Lindner J, Pawlis A. Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique. 2016.","short":"T. Rieger, T. Riedl, J. Lindner, A. Pawlis, (2016).","ieee":"T. Rieger, T. Riedl, J. Lindner, and A. Pawlis, “Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique.” 2016.","mla":"Rieger, T., et al. Enhancement of the Critical Thickness of CdSe/ZnSe Quantum Wells via the Strain Compensation Technique. 2016."},"conference":{"location":"Montpellier (France)","end_date":"2016-09-09","start_date":"2016-09-05","name":"19th International Conference on Molecular Beam Epitaxy"},"series_title":"poster Mo-P-8","year":"2016","_id":"4014","title":"Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique","type":"conference"}