{"volume":12,"title":"STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells","_id":"4027","department":[{"_id":"286"},{"_id":"15"}],"publication_identifier":{"issn":["1862-6351"]},"user_id":"55706","citation":{"short":"R.M. Kemper, P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram, J. Christen, J. Lindner, D.J. As, Physica Status Solidi (C) 12 (2015) 469–472.","chicago":"Kemper, R. M., P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram, J. Christen, Jörg Lindner, and D. J. As. “STEM-CL Investigations on the Influence of Stacking Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN Multi-Quantum Wells.” <i>Physica Status Solidi (C)</i> 12, no. 4–5 (2015): 469–72. <a href=\"https://doi.org/10.1002/pssc.201400154\">https://doi.org/10.1002/pssc.201400154</a>.","bibtex":"@article{Kemper_Veit_Mietze_Dempewolf_Wecker_Bertram_Christen_Lindner_As_2015, title={STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells}, volume={12}, DOI={<a href=\"https://doi.org/10.1002/pssc.201400154\">10.1002/pssc.201400154</a>}, number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Veit, P. and Mietze, C. and Dempewolf, A. and Wecker, T. and Bertram, F. and Christen, J. and Lindner, Jörg and As, D. J.}, year={2015}, pages={469–472} }","apa":"Kemper, R. M., Veit, P., Mietze, C., Dempewolf, A., Wecker, T., Bertram, F., … As, D. J. (2015). STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells. <i>Physica Status Solidi (C)</i>, <i>12</i>(4–5), 469–472. <a href=\"https://doi.org/10.1002/pssc.201400154\">https://doi.org/10.1002/pssc.201400154</a>","ama":"Kemper RM, Veit P, Mietze C, et al. STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells. <i>physica status solidi (c)</i>. 2015;12(4-5):469-472. doi:<a href=\"https://doi.org/10.1002/pssc.201400154\">10.1002/pssc.201400154</a>","mla":"Kemper, R. M., et al. “STEM-CL Investigations on the Influence of Stacking Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN Multi-Quantum Wells.” <i>Physica Status Solidi (C)</i>, vol. 12, no. 4–5, Wiley, 2015, pp. 469–72, doi:<a href=\"https://doi.org/10.1002/pssc.201400154\">10.1002/pssc.201400154</a>.","ieee":"R. M. Kemper <i>et al.</i>, “STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells,” <i>physica status solidi (c)</i>, vol. 12, no. 4–5, pp. 469–472, 2015."},"year":"2015","status":"public","intvolume":"        12","publisher":"Wiley","author":[{"full_name":"Kemper, R. M.","last_name":"Kemper","first_name":"R. M."},{"first_name":"P.","full_name":"Veit, P.","last_name":"Veit"},{"first_name":"C.","last_name":"Mietze","full_name":"Mietze, C."},{"first_name":"A.","last_name":"Dempewolf","full_name":"Dempewolf, A."},{"first_name":"T.","last_name":"Wecker","full_name":"Wecker, T."},{"full_name":"Bertram, F.","last_name":"Bertram","first_name":"F."},{"first_name":"J.","last_name":"Christen","full_name":"Christen, J."},{"full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner","first_name":"Jörg"},{"first_name":"D. J.","last_name":"As","full_name":"As, D. J."}],"type":"journal_article","date_updated":"2022-01-06T07:00:08Z","publication":"physica status solidi (c)","article_type":"original","language":[{"iso":"eng"}],"file_date_updated":"2018-08-21T13:18:38Z","date_created":"2018-08-21T13:17:46Z","has_accepted_license":"1","abstract":[{"lang":"eng","text":"We report the influence of {111} stacking faults on the cathodoluminescence (CL) emission characteristics of\r\ncubic GaN (c-GaN) films and cubic GaN/AlN multiquantum wells. Transmission electron microscopy\r\n(TEM) measurements indicate that stacking faults (SFs) on the {111} planes are the predominant crystallographic\r\ndefects in epitaxial films, which were grown on 3CSiC/ Si (001) substrates by plasma-assisted molecular\r\nbeam epitaxy. The correlation of the SFs and the luminescence output is evidenced with a CL setup\r\nintegrated in a scanning TEM (STEM). By comparing the STEM images and the simultaneously measured CL\r\nsignals it is demonstrated that SFs in these films lead to a reduced CL emission intensity. Furthermore, the CL\r\nemission intensity is shown to increase with increasing film thickness and decreasing SF density. This\r\ncorrelation can be connected to the reduction of the full width at half maximum of X-ray diffraction rocking\r\ncurves with increasing film thickness of c-GaN films."}],"doi":"10.1002/pssc.201400154","file":[{"success":1,"file_name":"STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN-AlN multi-quantum wells.pdf","file_id":"4028","relation":"main_file","content_type":"application/pdf","access_level":"closed","creator":"hclaudia","file_size":447603,"date_updated":"2018-08-21T13:18:38Z","date_created":"2018-08-21T13:18:38Z"}],"page":"469-472","ddc":["530"],"publication_status":"published","issue":"4-5"}