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   	<dc:title>Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs quantum wells</dc:title>
   	<dc:creator>Thanh Duc, Huynh</dc:creator>
   	<dc:creator>Förstner, Jens</dc:creator>
   	<dc:creator>Meier, Torsten</dc:creator>
   	<dc:creator>Priyadarshi, Shekhar</dc:creator>
   	<dc:creator>Racu, Ana Maria</dc:creator>
   	<dc:creator>Pierz, Klaus</dc:creator>
   	<dc:creator>Siegner, Uwe</dc:creator>
   	<dc:creator>Bieler, Mark</dc:creator>
   	<dc:subject>tet_topic_qw</dc:subject>
   	<dc:subject>ddc:530</dc:subject>
   	<dc:description>The injection of photocurrents by femtosecond laser pulses in (110)-orientedGaAs/AlGaAs quantum wells is
investigated theoretically and experimentally. The roomtemperature measurements show an oscillatory dependence
of the injection current amplitude and direction on the excitation photon energy. Microscopic calculations using the semiconductor Bloch equations that are set up on the basis of k.p band structure calculations provide a detailed understanding of the experimental findings.</dc:description>
   	<dc:publisher>Wiley</dc:publisher>
   	<dc:date>2011</dc:date>
   	<dc:type>info:eu-repo/semantics/article</dc:type>
   	<dc:type>doc-type:article</dc:type>
   	<dc:type>text</dc:type>
   	<dc:type>http://purl.org/coar/resource_type/c_6501</dc:type>
   	<dc:identifier>https://ris.uni-paderborn.de/record/4049</dc:identifier>
   	<dc:source>Thanh Duc H, Förstner J, Meier T, et al. Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs quantum wells. &lt;i&gt;physica status solidi (c)&lt;/i&gt;. 2011;8(4):1137-1140. doi:&lt;a href=&quot;https://doi.org/10.1002/pssc.201000831&quot;&gt;10.1002/pssc.201000831&lt;/a&gt;</dc:source>
   	<dc:language>eng</dc:language>
   	<dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1002/pssc.201000831</dc:relation>
   	<dc:relation>info:eu-repo/semantics/altIdentifier/issn/1862-6351</dc:relation>
   	<dc:rights>info:eu-repo/semantics/closedAccess</dc:rights>
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