{"language":[{"iso":"eng"}],"publication_status":"published","has_accepted_license":"1","date_updated":"2023-10-09T09:08:12Z","title":"Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures","publisher":"Trans Tech Publications","citation":{"mla":"Hiller, Lars, et al. “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i>, vol. 778–780, Trans Tech Publications, 2014, pp. 730–33, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>.","ieee":"L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures,” <i>Materials Science Forum</i>, vol. 778–780, pp. 730–733, 2014, doi: <a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>.","apa":"Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., &#38; Pezoldt, J. (2014). Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>, <i>778–780</i>, 730–733. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">https://doi.org/10.4028/www.scientific.net/msf.778-780.730</a>","short":"L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 778–780 (2014) 730–733.","ama":"Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>. 2014;778-780:730-733. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>","bibtex":"@article{Hiller_Stauden_Kemper_Lindner_As_Pezoldt_2014, title={Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures}, volume={778–780}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">10.4028/www.scientific.net/msf.778-780.730</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Hiller, Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat J. and Pezoldt, Jörg}, year={2014}, pages={730–733} }","chicago":"Hiller, Lars, Thomas Stauden, Ricarda M. Kemper, Jörg Lindner, Donat J. As, and Jörg Pezoldt. “Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i> 778–780 (2014): 730–33. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.778-780.730\">https://doi.org/10.4028/www.scientific.net/msf.778-780.730</a>."},"user_id":"14931","department":[{"_id":"286"}],"article_type":"original","_id":"4064","publication_identifier":{"issn":["1662-9752"]},"year":"2014","status":"public","author":[{"full_name":"Hiller, Lars","last_name":"Hiller","first_name":"Lars"},{"full_name":"Stauden, Thomas","last_name":"Stauden","first_name":"Thomas"},{"first_name":"Ricarda M.","full_name":"Kemper, Ricarda M.","last_name":"Kemper"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"},{"first_name":"Donat J.","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat J.","last_name":"As"},{"last_name":"Pezoldt","full_name":"Pezoldt, Jörg","first_name":"Jörg"}],"publication":"Materials Science Forum","date_created":"2018-08-22T12:17:30Z","page":"730-733","type":"journal_article","file_date_updated":"2018-08-22T12:20:24Z","file":[{"file_size":882721,"date_updated":"2018-08-22T12:20:24Z","creator":"hclaudia","file_name":"2014_Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures.pdf","content_type":"application/pdf","relation":"main_file","access_level":"closed","file_id":"4065","success":1,"date_created":"2018-08-22T12:20:24Z"}],"volume":"778-780","doi":"10.4028/www.scientific.net/msf.778-780.730","abstract":[{"text":"An anisotropic etching process for mesa structures using fluorinated plasma with\r\nhydrogen addition was developed in an electron cyclotron resonance setup. The evolution of the\r\nmesa morphology was studied in dependence on the gas composition, the applied bias and the\r\npressure. The achieved side wall slope approached 90° with a negligible trenching. The aspect ratios\r\nof the fabricated structure in the developed residue free ECR plasma etching process were between\r\n5 and 20.","lang":"eng"}],"ddc":["530"]}