conference paper R.M. Kemper author A. Kovacs author Thomas Riedl author 36950 D. Meertens author K. Tillmann author D. As author Jörg Lindner author 20797 15 department 286 department European Materials Research Society Spring Meeting 2014 2014Lille (France) eng Kemper RM, Kovacs A, Riedl T, et al. Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001). In: ; 2014. @inproceedings{Kemper_Kovacs_Riedl_Meertens_Tillmann_As_Lindner_2014, title={Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001)}, author={Kemper, R.M. and Kovacs, A. and Riedl, Thomas and Meertens, D. and Tillmann, K. and As, D. and Lindner, Jörg}, year={2014} } Kemper, R. M., et al. <i>Influence of Growth Area Reduction on Cubic GaN Heteroepitaxial Layer Growth on 3C-SiC(001)</i>. 2014. Kemper, R.M., A. Kovacs, Thomas Riedl, D. Meertens, K. Tillmann, D. As, and Jörg Lindner. “Influence of Growth Area Reduction on Cubic GaN Heteroepitaxial Layer Growth on 3C-SiC(001),” 2014. R.M. Kemper, A. Kovacs, T. Riedl, D. Meertens, K. Tillmann, D. As, J. Lindner, in: 2014. Kemper, R. M., Kovacs, A., Riedl, T., Meertens, D., Tillmann, K., As, D., &#38; Lindner, J. (2014). Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001). Presented at the European Materials Research Society Spring Meeting 2014, Lille (France). R. M. Kemper <i>et al.</i>, “Influence of growth area reduction on cubic GaN heteroepitaxial layer growth on 3C-SiC(001),” presented at the European Materials Research Society Spring Meeting 2014, Lille (France), 2014. 40682018-08-22T12:24:45Z2022-01-06T07:00:12Z