---
res:
  bibo_abstract:
  - We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells
    (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists
    of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which
    were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy.
    Substrate patterning has been realized by electron beam lithography and a reactive
    ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height
    of about 700 nm. (Scanning) transmission electron microscopy studies show that
    the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating
    the local growth rate. Further, the growth at the edges of the surface pattern
    is investigated. The MQW layers cover the 90° edges by developing low‐index facets
    rather than by forming a conformal system of 90° angled layers. @eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: R. M.
      foaf_name: Kemper, R. M.
      foaf_surname: Kemper
  - foaf_Person:
      foaf_givenName: C.
      foaf_name: Mietze, C.
      foaf_surname: Mietze
  - foaf_Person:
      foaf_givenName: L.
      foaf_name: Hiller, L.
      foaf_surname: Hiller
  - foaf_Person:
      foaf_givenName: T.
      foaf_name: Stauden, T.
      foaf_surname: Stauden
  - foaf_Person:
      foaf_givenName: J.
      foaf_name: Pezoldt, J.
      foaf_surname: Pezoldt
  - foaf_Person:
      foaf_givenName: D.
      foaf_name: Meertens, D.
      foaf_surname: Meertens
  - foaf_Person:
      foaf_givenName: M.
      foaf_name: Luysberg, M.
      foaf_surname: Luysberg
  - foaf_Person:
      foaf_givenName: D. J.
      foaf_name: As, D. J.
      foaf_surname: As
  - foaf_Person:
      foaf_givenName: Jörg
      foaf_name: Lindner, Jörg
      foaf_surname: Lindner
      foaf_workInfoHomepage: http://www.librecat.org/personId=20797
  bibo_doi: 10.1002/pssc.201300292
  bibo_issue: '2'
  bibo_volume: 11
  dct_date: 2014^xs_gYear
  dct_isPartOf:
  - http://id.crossref.org/issn/1862-6351
  dct_language: eng
  dct_publisher: Wiley@
  dct_title: Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)@
...