@article{4070,
  abstract     = {{We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy. Substrate patterning has been realized by electron beam lithography and a reactive ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height of about 700 nm. (Scanning) transmission electron microscopy studies show that the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating the local growth rate. Further, the growth at the edges of the surface pattern is investigated. The MQW layers cover the 90° edges by developing low‐index facets rather than by forming a conformal system of 90° angled layers. }},
  author       = {{Kemper, R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens, D. and Luysberg, M. and As, D. J. and Lindner, Jörg}},
  issn         = {{1862-6351}},
  journal      = {{physica status solidi (c)}},
  number       = {{2}},
  pages        = {{265--268}},
  publisher    = {{Wiley}},
  title        = {{{Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)}}},
  doi          = {{10.1002/pssc.201300292}},
  volume       = {{11}},
  year         = {{2014}},
}