Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001) Kemper, R. M. Mietze, C. Hiller, L. Stauden, T. Pezoldt, J. Meertens, D. Luysberg, M. As, D. J. Lindner, Jörg ddc:530 We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy. Substrate patterning has been realized by electron beam lithography and a reactive ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height of about 700 nm. (Scanning) transmission electron microscopy studies show that the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating the local growth rate. Further, the growth at the edges of the surface pattern is investigated. The MQW layers cover the 90° edges by developing low‐index facets rather than by forming a conformal system of 90° angled layers. Wiley 2014 info:eu-repo/semantics/article doc-type:article text http://purl.org/coar/resource_type/c_6501 https://ris.uni-paderborn.de/record/4070 Kemper RM, Mietze C, Hiller L, et al. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). <i>physica status solidi (c)</i>. 2014;11(2):265-268. doi:<a href="https://doi.org/10.1002/pssc.201300292">10.1002/pssc.201300292</a> eng info:eu-repo/semantics/altIdentifier/doi/10.1002/pssc.201300292 info:eu-repo/semantics/altIdentifier/issn/1862-6351 info:eu-repo/semantics/closedAccess