{"publication":"physica status solidi (c)","citation":{"bibtex":"@article{Kemper_Mietze_Hiller_Stauden_Pezoldt_Meertens_Luysberg_As_Lindner_2014, title={Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)}, volume={11}, DOI={<a href=\"https://doi.org/10.1002/pssc.201300292\">10.1002/pssc.201300292</a>}, number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens, D. and Luysberg, M. and As, D. J. and Lindner, Jörg}, year={2014}, pages={265–268} }","mla":"Kemper, R. M., et al. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i>, vol. 11, no. 2, Wiley, 2014, pp. 265–68, doi:<a href=\"https://doi.org/10.1002/pssc.201300292\">10.1002/pssc.201300292</a>.","ama":"Kemper RM, Mietze C, Hiller L, et al. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). <i>physica status solidi (c)</i>. 2014;11(2):265-268. doi:<a href=\"https://doi.org/10.1002/pssc.201300292\">10.1002/pssc.201300292</a>","short":"R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As, J. Lindner, Physica Status Solidi (C) 11 (2014) 265–268.","chicago":"Kemper, R. M., C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D. J. As, and Jörg Lindner. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i> 11, no. 2 (2014): 265–68. <a href=\"https://doi.org/10.1002/pssc.201300292\">https://doi.org/10.1002/pssc.201300292</a>.","ieee":"R. M. Kemper <i>et al.</i>, “Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001),” <i>physica status solidi (c)</i>, vol. 11, no. 2, pp. 265–268, 2014.","apa":"Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., … Lindner, J. (2014). Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). <i>Physica Status Solidi (C)</i>, <i>11</i>(2), 265–268. <a href=\"https://doi.org/10.1002/pssc.201300292\">https://doi.org/10.1002/pssc.201300292</a>"},"doi":"10.1002/pssc.201300292","publication_identifier":{"issn":["1862-6351"]},"issue":"2","volume":11,"author":[{"full_name":"Kemper, R. M.","last_name":"Kemper","first_name":"R. M."},{"first_name":"C.","full_name":"Mietze, C.","last_name":"Mietze"},{"first_name":"L.","full_name":"Hiller, L.","last_name":"Hiller"},{"full_name":"Stauden, T.","last_name":"Stauden","first_name":"T."},{"last_name":"Pezoldt","full_name":"Pezoldt, J.","first_name":"J."},{"first_name":"D.","full_name":"Meertens, D.","last_name":"Meertens"},{"first_name":"M.","last_name":"Luysberg","full_name":"Luysberg, M."},{"first_name":"D. J.","last_name":"As","full_name":"As, D. J."},{"full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797","first_name":"Jörg"}],"has_accepted_license":"1","file":[{"creator":"hclaudia","access_level":"closed","file_name":"Cubic GaN-AlN multi-quantum wells grown on pre-patterned 3C SiC Si 001.pdf","success":1,"content_type":"application/pdf","file_id":"4071","relation":"main_file","date_updated":"2018-08-22T12:30:12Z","file_size":3777577,"date_created":"2018-08-22T12:30:12Z"}],"department":[{"_id":"15"},{"_id":"286"}],"publisher":"Wiley","intvolume":"        11","article_type":"original","abstract":[{"lang":"eng","text":"We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy. Substrate patterning has been realized by electron beam lithography and a reactive ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height of about 700 nm. (Scanning) transmission electron microscopy studies show that the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating the local growth rate. Further, the growth at the edges of the surface pattern is investigated. The MQW layers cover the 90° edges by developing low‐index facets rather than by forming a conformal system of 90° angled layers. "}],"file_date_updated":"2018-08-22T12:30:12Z","page":"265-268","_id":"4070","status":"public","date_updated":"2022-01-06T07:00:13Z","date_created":"2018-08-22T12:28:15Z","title":"Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)","year":"2014","ddc":["530"],"publication_status":"published","user_id":"55706","type":"journal_article","language":[{"iso":"eng"}]}