article published R. M. Kemper author C. Mietze author L. Hiller author T. Stauden author J. Pezoldt author D. Meertens author M. Luysberg author D. J. As author Jörg Lindner author 20797 15 department 286 department We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy. Substrate patterning has been realized by electron beam lithography and a reactive ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height of about 700 nm. (Scanning) transmission electron microscopy studies show that the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating the local growth rate. Further, the growth at the edges of the surface pattern is investigated. The MQW layers cover the 90° edges by developing low‐index facets rather than by forming a conformal system of 90° angled layers. https://ris.uni-paderborn.de/download/4070/4071/Cubic GaN-AlN multi-quantum wells grown on pre-patterned 3C SiC Si 001.pdf application/pdf Wiley2014 eng 1862-635110.1002/pssc.201300292 112265-268 R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As, J. Lindner, Physica Status Solidi (C) 11 (2014) 265–268. Kemper, R. M., C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D. J. As, and Jörg Lindner. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i> 11, no. 2 (2014): 265–68. <a href="https://doi.org/10.1002/pssc.201300292">https://doi.org/10.1002/pssc.201300292</a>. R. M. Kemper <i>et al.</i>, “Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001),” <i>physica status solidi (c)</i>, vol. 11, no. 2, pp. 265–268, 2014. Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., … Lindner, J. (2014). Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). <i>Physica Status Solidi (C)</i>, <i>11</i>(2), 265–268. <a href="https://doi.org/10.1002/pssc.201300292">https://doi.org/10.1002/pssc.201300292</a> @article{Kemper_Mietze_Hiller_Stauden_Pezoldt_Meertens_Luysberg_As_Lindner_2014, title={Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)}, volume={11}, DOI={<a href="https://doi.org/10.1002/pssc.201300292">10.1002/pssc.201300292</a>}, number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens, D. and Luysberg, M. and As, D. J. and Lindner, Jörg}, year={2014}, pages={265–268} } Kemper RM, Mietze C, Hiller L, et al. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). <i>physica status solidi (c)</i>. 2014;11(2):265-268. doi:<a href="https://doi.org/10.1002/pssc.201300292">10.1002/pssc.201300292</a> Kemper, R. M., et al. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i>, vol. 11, no. 2, Wiley, 2014, pp. 265–68, doi:<a href="https://doi.org/10.1002/pssc.201300292">10.1002/pssc.201300292</a>. 40702018-08-22T12:28:15Z2022-01-06T07:00:13Z