---
_id: '4070'
abstract:
- lang: eng
  text: 'We report for the first time on the growth of cubic AlN/GaN multi‐quantum
    wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure
    consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between,
    which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy.
    Substrate patterning has been realized by electron beam lithography and a reactive
    ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height
    of about 700 nm. (Scanning) transmission electron microscopy studies show that
    the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating
    the local growth rate. Further, the growth at the edges of the surface pattern
    is investigated. The MQW layers cover the 90° edges by developing low‐index facets
    rather than by forming a conformal system of 90° angled layers. '
article_type: original
author:
- first_name: R. M.
  full_name: Kemper, R. M.
  last_name: Kemper
- first_name: C.
  full_name: Mietze, C.
  last_name: Mietze
- first_name: L.
  full_name: Hiller, L.
  last_name: Hiller
- first_name: T.
  full_name: Stauden, T.
  last_name: Stauden
- first_name: J.
  full_name: Pezoldt, J.
  last_name: Pezoldt
- first_name: D.
  full_name: Meertens, D.
  last_name: Meertens
- first_name: M.
  full_name: Luysberg, M.
  last_name: Luysberg
- first_name: D. J.
  full_name: As, D. J.
  last_name: As
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
citation:
  ama: Kemper RM, Mietze C, Hiller L, et al. Cubic GaN/AlN multi-quantum wells grown
    on pre-patterned 3C-SiC/Si (001). <i>physica status solidi (c)</i>. 2014;11(2):265-268.
    doi:<a href="https://doi.org/10.1002/pssc.201300292">10.1002/pssc.201300292</a>
  apa: Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens,
    D., … Lindner, J. (2014). Cubic GaN/AlN multi-quantum wells grown on pre-patterned
    3C-SiC/Si (001). <i>Physica Status Solidi (C)</i>, <i>11</i>(2), 265–268. <a href="https://doi.org/10.1002/pssc.201300292">https://doi.org/10.1002/pssc.201300292</a>
  bibtex: '@article{Kemper_Mietze_Hiller_Stauden_Pezoldt_Meertens_Luysberg_As_Lindner_2014,
    title={Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)},
    volume={11}, DOI={<a href="https://doi.org/10.1002/pssc.201300292">10.1002/pssc.201300292</a>},
    number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper,
    R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens,
    D. and Luysberg, M. and As, D. J. and Lindner, Jörg}, year={2014}, pages={265–268}
    }'
  chicago: 'Kemper, R. M., C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens,
    M. Luysberg, D. J. As, and Jörg Lindner. “Cubic GaN/AlN Multi-Quantum Wells Grown
    on Pre-Patterned 3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i> 11, no. 2
    (2014): 265–68. <a href="https://doi.org/10.1002/pssc.201300292">https://doi.org/10.1002/pssc.201300292</a>.'
  ieee: R. M. Kemper <i>et al.</i>, “Cubic GaN/AlN multi-quantum wells grown on pre-patterned
    3C-SiC/Si (001),” <i>physica status solidi (c)</i>, vol. 11, no. 2, pp. 265–268,
    2014.
  mla: Kemper, R. M., et al. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned
    3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i>, vol. 11, no. 2, Wiley, 2014,
    pp. 265–68, doi:<a href="https://doi.org/10.1002/pssc.201300292">10.1002/pssc.201300292</a>.
  short: R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M.
    Luysberg, D.J. As, J. Lindner, Physica Status Solidi (C) 11 (2014) 265–268.
date_created: 2018-08-22T12:28:15Z
date_updated: 2022-01-06T07:00:13Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1002/pssc.201300292
file:
- access_level: closed
  content_type: application/pdf
  creator: hclaudia
  date_created: 2018-08-22T12:30:12Z
  date_updated: 2018-08-22T12:30:12Z
  file_id: '4071'
  file_name: Cubic GaN-AlN multi-quantum wells grown on pre-patterned 3C SiC Si 001.pdf
  file_size: 3777577
  relation: main_file
  success: 1
file_date_updated: 2018-08-22T12:30:12Z
has_accepted_license: '1'
intvolume: '        11'
issue: '2'
language:
- iso: eng
page: 265-268
publication: physica status solidi (c)
publication_identifier:
  issn:
  - 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)
type: journal_article
user_id: '55706'
volume: 11
year: '2014'
...