{"intvolume":"       378","status":"public","year":"2012","author":[{"first_name":"R.M.","full_name":"Kemper, R.M.","last_name":"Kemper"},{"first_name":"L.","full_name":"Hiller, L.","last_name":"Hiller"},{"first_name":"T.","last_name":"Stauden","full_name":"Stauden, T."},{"first_name":"J.","full_name":"Pezoldt, J.","last_name":"Pezoldt"},{"last_name":"Duschik","full_name":"Duschik, K.","first_name":"K."},{"first_name":"T.","last_name":"Niendorf","full_name":"Niendorf, T."},{"first_name":"H.J.","last_name":"Maier","full_name":"Maier, H.J."},{"first_name":"D.","last_name":"Meertens","full_name":"Meertens, D."},{"last_name":"Tillmann","full_name":"Tillmann, K.","first_name":"K."},{"last_name":"As","full_name":"As, D.J.","first_name":"D.J."},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"}],"publisher":"Elsevier BV","department":[{"_id":"15"},{"_id":"286"},{"_id":"294"}],"publication_identifier":{"issn":["0022-0248"]},"_id":"4104","title":"Growth of cubic GaN on 3C–SiC/Si (001) nanostructures","volume":378,"citation":{"ieee":"R. M. Kemper <i>et al.</i>, “Growth of cubic GaN on 3C–SiC/Si (001) nanostructures,” <i>Journal of Crystal Growth</i>, vol. 378, pp. 291–294, 2012.","ama":"Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. <i>Journal of Crystal Growth</i>. 2012;378:291-294. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">10.1016/j.jcrysgro.2012.10.011</a>","bibtex":"@article{Kemper_Hiller_Stauden_Pezoldt_Duschik_Niendorf_Maier_Meertens_Tillmann_As_et al._2012, title={Growth of cubic GaN on 3C–SiC/Si (001) nanostructures}, volume={378}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">10.1016/j.jcrysgro.2012.10.011</a>}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Hiller, L. and Stauden, T. and Pezoldt, J. and Duschik, K. and Niendorf, T. and Maier, H.J. and Meertens, D. and Tillmann, K. and As, D.J. and et al.}, year={2012}, pages={291–294} }","mla":"Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” <i>Journal of Crystal Growth</i>, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">10.1016/j.jcrysgro.2012.10.011</a>.","chicago":"Kemper, R.M., L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.” <i>Journal of Crystal Growth</i> 378 (2012): 291–94. <a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">https://doi.org/10.1016/j.jcrysgro.2012.10.011</a>.","apa":"Kemper, R. M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., … Lindner, J. (2012). Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. <i>Journal of Crystal Growth</i>, <i>378</i>, 291–294. <a href=\"https://doi.org/10.1016/j.jcrysgro.2012.10.011\">https://doi.org/10.1016/j.jcrysgro.2012.10.011</a>","short":"R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal Growth 378 (2012) 291–294."},"user_id":"55706","language":[{"iso":"eng"}],"article_type":"original","conference":{"location":"Nara (Japan)","name":"17th Int. Conference on MBE 2012"},"publication":"Journal of Crystal Growth","type":"journal_article","date_updated":"2022-01-06T07:00:18Z","has_accepted_license":"1","abstract":[{"lang":"eng","text":"We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure cubic GaN crystals with a low defect density on top of the post shaped 3C–SiC nanostructures and GaN grown on their sidewalls, which is dominated by {111} planar defects. The nanostructures, aligned parallel and perpendicular to the [110] directions of the substrate, are located in anti-phase domains of the 3C–SiC/Si (001) substrate. These anti-phase domains strongly influence the optimum growth of GaN layers in these regions. TEM measurements demonstrate a different stacking fault density in the cubic GaN epilayer in these areas."}],"file_date_updated":"2018-08-23T13:01:13Z","date_created":"2018-08-23T12:59:44Z","ddc":["530"],"publication_status":"published","doi":"10.1016/j.jcrysgro.2012.10.011","file":[{"file_name":"Growth of cubic GaN on 3C-SiC-Si 001 nanostructures.pdf","file_id":"4105","success":1,"file_size":3716730,"creator":"hclaudia","date_created":"2018-08-23T13:01:13Z","date_updated":"2018-08-23T13:01:13Z","relation":"main_file","content_type":"application/pdf","access_level":"closed"}],"page":"291-294"}