--- res: bibo_abstract: - "Anisotropic etching processes for mesa structure formation using fluorinated plasma\r\natmospheres in an electron cyclotron resonance (ECR) plasma etcher were studied on Novasic\r\nsubstrates with 10 μm thick 3C-SiC(100) grown on Si(100). To achieve reasonable etching rates, a\r\nspecial gas inlet system suitable for injecting SF6 into the high density downstream Ar ECR plasma\r\nwas designed. The influence of the etching mask material on the sidewall morphology was\r\ninvestigated. Masking materials with small grain sizes are preferable to achieve a desired shape.\r\nThe evolution of the mesa form was investigated in dependence on the gas composition, the applied\r\nbias, the pressure and the composition of the gas atmosphere. The achieved sidewall slope was 84.5\r\ndeg. The aspect ratios of the fabricated structures in the developed residue free ECR plasma etching\r\nprocess were between 5 and 10. Mesa structures aligned to [100] and [110] directions were\r\nfabricated.@eng" bibo_authorlist: - foaf_Person: foaf_givenName: Lars foaf_name: Hiller, Lars foaf_surname: Hiller - foaf_Person: foaf_givenName: Thomas foaf_name: Stauden, Thomas foaf_surname: Stauden - foaf_Person: foaf_givenName: Ricarda M. foaf_name: Kemper, Ricarda M. foaf_surname: Kemper - foaf_Person: foaf_givenName: Jörg foaf_name: Lindner, Jörg foaf_surname: Lindner foaf_workInfoHomepage: http://www.librecat.org/personId=20797 - foaf_Person: foaf_givenName: Donat J. foaf_name: As, Donat J. foaf_surname: As foaf_workInfoHomepage: http://www.librecat.org/personId=14 orcid: 0000-0003-1121-3565 - foaf_Person: foaf_givenName: Jörg foaf_name: Pezoldt, Jörg foaf_surname: Pezoldt bibo_doi: 10.4028/www.scientific.net/msf.717-720.901 bibo_volume: 717-720 dct_date: 2012^xs_gYear dct_isPartOf: - http://id.crossref.org/issn/1662-9752 dct_language: eng dct_publisher: Trans Tech Publications@ dct_title: ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures@ ...