{"file":[{"file_name":"ECR-etching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.pdf","file_id":"4117","success":1,"file_size":1309453,"creator":"hclaudia","date_created":"2018-08-23T13:37:42Z","date_updated":"2018-08-23T13:37:42Z","relation":"main_file","access_level":"closed","content_type":"application/pdf"}],"page":"901-904","doi":"10.4028/www.scientific.net/msf.717-720.901","publication_status":"published","ddc":["530"],"date_created":"2018-08-23T13:35:20Z","file_date_updated":"2018-08-23T13:37:42Z","abstract":[{"lang":"eng","text":"Anisotropic etching processes for mesa structure formation using fluorinated plasma\r\natmospheres in an electron cyclotron resonance (ECR) plasma etcher were studied on Novasic\r\nsubstrates with 10 μm thick 3C-SiC(100) grown on Si(100). To achieve reasonable etching rates, a\r\nspecial gas inlet system suitable for injecting SF6 into the high density downstream Ar ECR plasma\r\nwas designed. The influence of the etching mask material on the sidewall morphology was\r\ninvestigated. Masking materials with small grain sizes are preferable to achieve a desired shape.\r\nThe evolution of the mesa form was investigated in dependence on the gas composition, the applied\r\nbias, the pressure and the composition of the gas atmosphere. The achieved sidewall slope was 84.5\r\ndeg. The aspect ratios of the fabricated structures in the developed residue free ECR plasma etching\r\nprocess were between 5 and 10. Mesa structures aligned to [100] and [110] directions were\r\nfabricated."}],"has_accepted_license":"1","article_type":"original","type":"journal_article","date_updated":"2023-10-09T09:09:13Z","publication":"Materials Science Forum","conference":{"name":"International Conference on Silicon Carbide and Related Materials (ICSCRM) 2011","location":"Cleveland (USA)"},"language":[{"iso":"eng"}],"user_id":"14931","citation":{"apa":"Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., &#38; Pezoldt, J. (2012). ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>, <i>717–720</i>, 901–904. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">https://doi.org/10.4028/www.scientific.net/msf.717-720.901</a>","ama":"Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. <i>Materials Science Forum</i>. 2012;717-720:901-904. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">10.4028/www.scientific.net/msf.717-720.901</a>","mla":"Hiller, Lars, et al. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i>, vol. 717–720, Trans Tech Publications, 2012, pp. 901–04, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">10.4028/www.scientific.net/msf.717-720.901</a>.","ieee":"L. Hiller, T. Stauden, R. M. Kemper, J. Lindner, D. J. As, and J. Pezoldt, “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures,” <i>Materials Science Forum</i>, vol. 717–720, pp. 901–904, 2012, doi: <a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">10.4028/www.scientific.net/msf.717-720.901</a>.","chicago":"Hiller, Lars, Thomas Stauden, Ricarda M. Kemper, Jörg Lindner, Donat J. As, and Jörg Pezoldt. “ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures.” <i>Materials Science Forum</i> 717–720 (2012): 901–4. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">https://doi.org/10.4028/www.scientific.net/msf.717-720.901</a>.","short":"L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 717–720 (2012) 901–904.","bibtex":"@article{Hiller_Stauden_Kemper_Lindner_As_Pezoldt_2012, title={ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures}, volume={717–720}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.717-720.901\">10.4028/www.scientific.net/msf.717-720.901</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Hiller, Lars and Stauden, Thomas and Kemper, Ricarda M. and Lindner, Jörg and As, Donat J. and Pezoldt, Jörg}, year={2012}, pages={901–904} }"},"_id":"4116","title":"ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures","publication_identifier":{"issn":["1662-9752"]},"department":[{"_id":"15"},{"_id":"286"}],"volume":"717-720","author":[{"full_name":"Hiller, Lars","last_name":"Hiller","first_name":"Lars"},{"first_name":"Thomas","last_name":"Stauden","full_name":"Stauden, Thomas"},{"first_name":"Ricarda M.","full_name":"Kemper, Ricarda M.","last_name":"Kemper"},{"full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner","first_name":"Jörg"},{"id":"14","last_name":"As","full_name":"As, Donat J.","orcid":"0000-0003-1121-3565","first_name":"Donat J."},{"last_name":"Pezoldt","full_name":"Pezoldt, Jörg","first_name":"Jörg"}],"publisher":"Trans Tech Publications","status":"public","year":"2012"}