---
res:
  bibo_abstract:
  - This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized
    3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a
    near-interface defect structure containing nanometric voids and dislocation loops
    by the implantation of He ions and subsequent thermal annealing. The structural
    features of this defect microstructure are investigated by transmission electron
    microscopy. High-resolution X-ray diffraction in a parallel beam configuration
    is used to quantify the strain state of the top SiC layer. Further annealing experiments
    were carried out in order to emulate typical process conditions for the growth
    of wide-bandgap semiconductors like, for example GaN. It is found that prolonged
    annealing at elevated temperatures leads to coarsening of the voids and to a much
    less efficient strain reduction. We show that this issue can be resolved by the
    co-implantation of oxygen to form highly thermally stable cavity/extended defect
    structures. The technique presented here may be useful for a variety of other
    thermally mismatched bulk/thin film couples as well.@eng
  bibo_authorlist:
  - foaf_Person:
      foaf_givenName: Maik
      foaf_name: Häberlen, Maik
      foaf_surname: Häberlen
  - foaf_Person:
      foaf_givenName: Brian
      foaf_name: Murphy, Brian
      foaf_surname: Murphy
  - foaf_Person:
      foaf_givenName: Bernd
      foaf_name: Stritzker, Bernd
      foaf_surname: Stritzker
  - foaf_Person:
      foaf_givenName: Jörg
      foaf_name: Lindner, Jörg
      foaf_surname: Lindner
      foaf_workInfoHomepage: http://www.librecat.org/personId=20797
  bibo_doi: 10.1002/pssc.201000342
  bibo_issue: '3'
  bibo_volume: 8
  dct_date: 2011^xs_gYear
  dct_isPartOf:
  - http://id.crossref.org/issn/1862-6351
  dct_language: eng
  dct_publisher: Wiley@
  dct_title: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and
    O+ ion implantation@
...