---
_id: '4142'
abstract:
- lang: eng
text: This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized
3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a
near-interface defect structure containing nanometric voids and dislocation loops
by the implantation of He ions and subsequent thermal annealing. The structural
features of this defect microstructure are investigated by transmission electron
microscopy. High-resolution X-ray diffraction in a parallel beam configuration
is used to quantify the strain state of the top SiC layer. Further annealing experiments
were carried out in order to emulate typical process conditions for the growth
of wide-bandgap semiconductors like, for example GaN. It is found that prolonged
annealing at elevated temperatures leads to coarsening of the voids and to a much
less efficient strain reduction. We show that this issue can be resolved by the
co-implantation of oxygen to form highly thermally stable cavity/extended defect
structures. The technique presented here may be useful for a variety of other
thermally mismatched bulk/thin film couples as well.
article_type: original
author:
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Brian
full_name: Murphy, Brian
last_name: Murphy
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111)
thin film on silicon by He+ and O+ ion implantation. physica status solidi
(c). 2011;8(3):944-947. doi:10.1002/pssc.201000342
apa: Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Decoupling
of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation.
Physica Status Solidi (C), 8(3), 944–947. https://doi.org/10.1002/pssc.201000342
bibtex: '@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Decoupling of a
strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}, volume={8},
DOI={10.1002/pssc.201000342},
number={3}, journal={physica status solidi (c)}, publisher={Wiley}, author={Häberlen,
Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}, year={2011}, pages={944–947}
}'
chicago: 'Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg Lindner. “Decoupling
of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.”
Physica Status Solidi (C) 8, no. 3 (2011): 944–47. https://doi.org/10.1002/pssc.201000342.'
ieee: M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Decoupling of a strained
3C-SiC(111) thin film on silicon by He+ and O+ ion implantation,” physica status
solidi (c), vol. 8, no. 3, pp. 944–947, 2011.
mla: Häberlen, Maik, et al. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon
by He+ and O+ Ion Implantation.” Physica Status Solidi (C), vol. 8, no.
3, Wiley, 2011, pp. 944–47, doi:10.1002/pssc.201000342.
short: M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C)
8 (2011) 944–947.
date_created: 2018-08-27T12:31:20Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '286'
doi: 10.1002/pssc.201000342
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:32:07Z
date_updated: 2018-08-27T12:32:07Z
file_id: '4143'
file_name: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and
O+ ion implantation.pdf
file_size: 152623
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:32:07Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '3'
language:
- iso: eng
page: 944-947
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion
implantation
type: journal_article
user_id: '55706'
volume: 8
year: '2011'
...