{"ddc":["530"],"publication_status":"published","issue":"1","doi":"10.1016/j.jcrysgro.2010.12.042","page":"84-87","file":[{"creator":"hclaudia","file_size":665964,"date_updated":"2018-08-27T12:35:32Z","date_created":"2018-08-27T12:35:32Z","relation":"main_file","content_type":"application/pdf","access_level":"closed","file_name":"Growth of cubic GaN on nano-patterned 3C-SiC (001) substrates.pdf","file_id":"4145","success":1}],"has_accepted_license":"1","abstract":[{"text":"Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si \r\n(0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques.","lang":"eng"}],"file_date_updated":"2018-08-27T12:35:32Z","date_created":"2018-08-27T12:34:33Z","language":[{"iso":"eng"}],"article_type":"original","date_updated":"2022-01-06T07:00:24Z","type":"journal_article","publication":"Journal of Crystal Growth","status":"public","intvolume":"       323","year":"2010","author":[{"full_name":"Kemper, R.M.","last_name":"Kemper","first_name":"R.M."},{"full_name":"Weinl, M.","last_name":"Weinl","first_name":"M."},{"full_name":"Mietze, C.","last_name":"Mietze","first_name":"C."},{"last_name":"Häberlen","full_name":"Häberlen, M.","first_name":"M."},{"last_name":"Schupp","full_name":"Schupp, T.","first_name":"T."},{"first_name":"E.","last_name":"Tschumak","full_name":"Tschumak, E."},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"},{"last_name":"Lischka","full_name":"Lischka, K.","first_name":"K."},{"first_name":"Donald ","full_name":"As, Donald ","last_name":"As"}],"publisher":"Elsevier BV","_id":"4144","title":"Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates","publication_identifier":{"issn":["0022-0248"]},"department":[{"_id":"15"},{"_id":"286"}],"volume":323,"user_id":"55706","citation":{"bibtex":"@article{Kemper_Weinl_Mietze_Häberlen_Schupp_Tschumak_Lindner_Lischka_As_2010, title={Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates}, volume={323}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>}, number={1}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Kemper, R.M. and Weinl, M. and Mietze, C. and Häberlen, M. and Schupp, T. and Tschumak, E. and Lindner, Jörg and Lischka, K. and As, Donald }, year={2010}, pages={84–87} }","chicago":"Kemper, R.M., M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, Jörg Lindner, K. Lischka, and Donald  As. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” <i>Journal of Crystal Growth</i> 323, no. 1 (2010): 84–87. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>.","short":"R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.","ieee":"R. M. Kemper <i>et al.</i>, “Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates,” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, pp. 84–87, 2010.","ama":"Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. <i>Journal of Crystal Growth</i>. 2010;323(1):84-87. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>","mla":"Kemper, R. M., et al. “Growth of Cubic GaN on Nano-Patterned 3C-SiC/Si (001) Substrates.” <i>Journal of Crystal Growth</i>, vol. 323, no. 1, Elsevier BV, 2010, pp. 84–87, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">10.1016/j.jcrysgro.2010.12.042</a>.","apa":"Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., … As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. <i>Journal of Crystal Growth</i>, <i>323</i>(1), 84–87. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.12.042\">https://doi.org/10.1016/j.jcrysgro.2010.12.042</a>"}}