Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates - Kemper, R.M.; Weinl, M.; Mietze, C.; Häberlen, M.; Schupp, T.; Tschumak, E.; Lindner, Jörg; Lischka, K.; As, Donald (Journal of Crystal Growth, 2010)
Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1)substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers.Nano-patterning of 3C-SiC/Si(001) is achieved by self-ordered colloidal masks for the first time. The method presented here offers the possibility to create nano-patterned cubic GaN without the need for a GaN etching process andt hus isa potential alternative to the conventional top–down fabrication techniques.
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