{"title":"Anti-phase domains in cubic GaN","_id":"4146","department":[{"_id":"15"},{"_id":"286"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"volume":110,"user_id":"14931","citation":{"chicago":"Maria Kemper, Ricarda, Thorsten Schupp, Maik Häberlen, Thomas Niendorf, Hans-Jürgen Maier, Anja Dempewolf, Frank Bertram, et al. “Anti-Phase Domains in Cubic GaN.” <i>Journal of Applied Physics</i> 110, no. 12 (2011). <a href=\"https://doi.org/10.1063/1.3666050\">https://doi.org/10.1063/1.3666050</a>.","apa":"Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H.-J., Dempewolf, A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., &#38; As, D. (2011). Anti-phase domains in cubic GaN. <i>Journal of Applied Physics</i>, <i>110</i>(12), Article 123512. <a href=\"https://doi.org/10.1063/1.3666050\">https://doi.org/10.1063/1.3666050</a>","short":"R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of Applied Physics 110 (2011).","ieee":"R. Maria Kemper <i>et al.</i>, “Anti-phase domains in cubic GaN,” <i>Journal of Applied Physics</i>, vol. 110, no. 12, Art. no. 123512, 2011, doi: <a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>.","bibtex":"@article{Maria Kemper_Schupp_Häberlen_Niendorf_Maier_Dempewolf_Bertram_Christen_Kirste_Hoffmann_et al._2011, title={Anti-phase domains in cubic GaN}, volume={110}, DOI={<a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>}, number={12123512}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Maria Kemper, Ricarda and Schupp, Thorsten and Häberlen, Maik and Niendorf, Thomas and Maier, Hans-Jürgen and Dempewolf, Anja and Bertram, Frank and Christen, Jürgen and Kirste, Ronny and Hoffmann, Axel and et al.}, year={2011} }","ama":"Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN. <i>Journal of Applied Physics</i>. 2011;110(12). doi:<a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>","mla":"Maria Kemper, Ricarda, et al. “Anti-Phase Domains in Cubic GaN.” <i>Journal of Applied Physics</i>, vol. 110, no. 12, 123512, AIP Publishing, 2011, doi:<a href=\"https://doi.org/10.1063/1.3666050\">10.1063/1.3666050</a>."},"status":"public","intvolume":"       110","year":"2011","publisher":"AIP Publishing","author":[{"last_name":"Maria Kemper","full_name":"Maria Kemper, Ricarda","first_name":"Ricarda"},{"first_name":"Thorsten","last_name":"Schupp","full_name":"Schupp, Thorsten"},{"last_name":"Häberlen","full_name":"Häberlen, Maik","first_name":"Maik"},{"first_name":"Thomas","last_name":"Niendorf","full_name":"Niendorf, Thomas"},{"full_name":"Maier, Hans-Jürgen","last_name":"Maier","first_name":"Hans-Jürgen"},{"last_name":"Dempewolf","full_name":"Dempewolf, Anja","first_name":"Anja"},{"full_name":"Bertram, Frank","last_name":"Bertram","first_name":"Frank"},{"first_name":"Jürgen","full_name":"Christen, Jürgen","last_name":"Christen"},{"first_name":"Ronny","full_name":"Kirste, Ronny","last_name":"Kirste"},{"first_name":"Axel","last_name":"Hoffmann","full_name":"Hoffmann, Axel"},{"first_name":"Jörg","id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg"},{"full_name":"As, Donat","last_name":"As","id":"14","first_name":"Donat","orcid":"0000-0003-1121-3565"}],"article_type":"original","date_updated":"2023-10-09T09:10:50Z","type":"journal_article","publication":"Journal of Applied Physics","language":[{"iso":"eng"}],"file_date_updated":"2018-08-27T12:42:38Z","date_created":"2018-08-27T12:40:30Z","has_accepted_license":"1","abstract":[{"lang":"eng","text":"The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, μ-Raman and cathodoluminescence spectroscopy."}],"article_number":"123512","doi":"10.1063/1.3666050","file":[{"file_id":"4147","file_name":"Anti-phase domains in cubic GaN.pdf","success":1,"date_created":"2018-08-27T12:42:38Z","date_updated":"2018-08-27T12:42:38Z","creator":"hclaudia","file_size":3305430,"content_type":"application/pdf","access_level":"closed","relation":"main_file"}],"ddc":["530"],"publication_status":"published","issue":"12"}