{"keyword":["tet_topic_qw"],"type":"journal_article","ddc":["530"],"article_type":"original","publisher":"American Physical Society (APS)","file_date_updated":"2018-08-28T09:13:01Z","file":[{"access_level":"closed","creator":"hclaudia","success":1,"file_size":713758,"date_updated":"2018-08-28T09:13:01Z","file_id":"4178","file_name":"2010 Kuznetsova,Gögh,Förstner,Meier T,Cundiff, Varga,Thomas_Modeling excitonic line shapes in weakly disordered semiconductor nanostructures.pdf","relation":"main_file","date_created":"2018-08-28T09:13:01Z","content_type":"application/pdf"}],"status":"public","user_id":"16199","has_accepted_license":"1","language":[{"iso":"eng"}],"year":"2010","date_updated":"2023-01-27T12:50:09Z","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"mla":"Kuznetsova, I., et al. “Modeling Excitonic Line Shapes in Weakly Disordered Semiconductor Nanostructures.” <i>Physical Review B</i>, vol. 81, no. 7, 075307, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.075307\">10.1103/physrevb.81.075307</a>.","ieee":"I. Kuznetsova <i>et al.</i>, “Modeling excitonic line shapes in weakly disordered semiconductor nanostructures,” <i>Physical Review B</i>, vol. 81, no. 7, Art. no. 075307, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.81.075307\">10.1103/physrevb.81.075307</a>.","short":"I. Kuznetsova, N. Gőgh, J. Förstner, T. Meier, S.T. Cundiff, I. Varga, P. Thomas, Physical Review B 81 (2010).","chicago":"Kuznetsova, I., N. Gőgh, Jens Förstner, Torsten Meier, S. T. Cundiff, I. Varga, and P. Thomas. “Modeling Excitonic Line Shapes in Weakly Disordered Semiconductor Nanostructures.” <i>Physical Review B</i> 81, no. 7 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.075307\">https://doi.org/10.1103/physrevb.81.075307</a>.","ama":"Kuznetsova I, Gőgh N, Förstner J, et al. Modeling excitonic line shapes in weakly disordered semiconductor nanostructures. <i>Physical Review B</i>. 2010;81(7). doi:<a href=\"https://doi.org/10.1103/physrevb.81.075307\">10.1103/physrevb.81.075307</a>","bibtex":"@article{Kuznetsova_Gőgh_Förstner_Meier_Cundiff_Varga_Thomas_2010, title={Modeling excitonic line shapes in weakly disordered semiconductor nanostructures}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.075307\">10.1103/physrevb.81.075307</a>}, number={7075307}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kuznetsova, I. and Gőgh, N. and Förstner, Jens and Meier, Torsten and Cundiff, S. T. and Varga, I. and Thomas, P.}, year={2010} }","apa":"Kuznetsova, I., Gőgh, N., Förstner, J., Meier, T., Cundiff, S. T., Varga, I., &#38; Thomas, P. (2010). Modeling excitonic line shapes in weakly disordered semiconductor nanostructures. <i>Physical Review B</i>, <i>81</i>(7), Article 075307. <a href=\"https://doi.org/10.1103/physrevb.81.075307\">https://doi.org/10.1103/physrevb.81.075307</a>"},"publication":"Physical Review B","department":[{"_id":"15"},{"_id":"293"},{"_id":"170"},{"_id":"230"}],"article_number":"075307","_id":"4177","author":[{"last_name":"Kuznetsova","first_name":"I.","full_name":"Kuznetsova, I."},{"first_name":"N.","last_name":"Gőgh","full_name":"Gőgh, N."},{"last_name":"Förstner","first_name":"Jens","orcid":"0000-0001-7059-9862","full_name":"Förstner, Jens","id":"158"},{"last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"full_name":"Cundiff, S. T.","first_name":"S. T.","last_name":"Cundiff"},{"first_name":"I.","last_name":"Varga","full_name":"Varga, I."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."}],"title":"Modeling excitonic line shapes in weakly disordered semiconductor nanostructures","intvolume":"        81","abstract":[{"lang":"eng","text":"Excitonic spectra of weakly disordered semiconductor heterostructures are simulated on the basis of a\r\none-dimensional tight-binding model. The influence of the length scale of weak disorder in quantum wells on\r\nthe redshift of the excitonic peak and its linewidth is studied. By calculating two-dimensional Fouriertransform\r\nspectra we are able to determine the contribution of disorder to inhomogeneous and also to homogeneous\r\nbroadenings separately. This disorder-induced dephasing is related to a Fano-type coupling and leads\r\nto contributions to the homogeneous linewidth that depends on energy within the inhomogeneously broadened\r\nline. The model includes heavy- and light-hole excitons and yields smaller inhomogeneous broadening for the\r\nlight-hole exciton if compared to the heavy-hole exciton, which agrees qualitatively with the experiment."}],"date_created":"2018-08-28T09:09:37Z","volume":81,"doi":"10.1103/physrevb.81.075307","issue":"7","publication_status":"published"}