{"user_id":"71124","author":[{"full_name":"Tuktamyshev, A","last_name":"Tuktamyshev","first_name":"A"},{"full_name":"Fedorov, A","last_name":"Fedorov","first_name":"A"},{"full_name":"Bietti, S","last_name":"Bietti","first_name":"S"},{"last_name":"Vichi","full_name":"Vichi, S","first_name":"S"},{"last_name":" Zeuner","full_name":" Zeuner, K.D","first_name":"K.D"},{"full_name":"Jöns, Klaus D.","last_name":"Jöns","id":"85353","first_name":"Klaus D."},{"first_name":"D","last_name":" Chrastina","full_name":" Chrastina, D"},{"full_name":"Tsukamoto, S","last_name":"Tsukamoto","first_name":"S"},{"last_name":"Zwiller","full_name":"Zwiller, V","first_name":"V"},{"last_name":"Gurioli","full_name":"Gurioli, M","first_name":"M"},{"last_name":"Sanguinetti","full_name":"Sanguinetti, S","first_name":"S"}],"year":"2021","publication_status":"published","date_created":"2023-02-07T21:06:24Z","status":"public","_id":"41886","department":[{"_id":"623"}],"type":"conference","volume":118,"article_number":"133102","citation":{"short":"A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K.D.  Zeuner, K.D. Jöns, D.  Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, S. Sanguinetti, 118 (2021).","ama":"Tuktamyshev A, Fedorov A, Bietti S, et al. Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates. 2021;118(13).","ieee":"A. Tuktamyshev <i>et al.</i>, “Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates,” vol. 118, no. 13. 2021.","bibtex":"@article{Tuktamyshev_Fedorov_Bietti_Vichi_ Zeuner_Jöns_ Chrastina_Tsukamoto_Zwiller_Gurioli_et al._2021, series={Appl. Phys. Lett.}, title={Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates}, volume={118}, number={13133102}, author={Tuktamyshev, A and Fedorov, A and Bietti, S and Vichi, S and  Zeuner, K.D and Jöns, Klaus D. and  Chrastina, D and Tsukamoto, S and Zwiller, V and Gurioli, M and et al.}, year={2021}, collection={Appl. Phys. Lett.} }","chicago":"Tuktamyshev, A, A Fedorov, S Bietti, S Vichi, K.D  Zeuner, Klaus D. Jöns, D  Chrastina, et al. “Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates.” Appl. Phys. Lett., 2021.","mla":"Tuktamyshev, A., et al. <i>Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates</i>. no. 13, 133102, 2021.","apa":"Tuktamyshev, A., Fedorov, A., Bietti, S., Vichi, S.,  Zeuner, K. D., Jöns, K. D.,  Chrastina, D., Tsukamoto, S., Zwiller, V., Gurioli, M., &#38; Sanguinetti, S. (2021). <i>Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates</i> (No. 133102; Vol. 118, Issue 13)."},"date_updated":"2023-02-13T08:50:45Z","issue":"13","intvolume":"       118","language":[{"iso":"ger"}],"series_title":"Appl. Phys. Lett.","title":"Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates"}