{"date_updated":"2023-02-13T08:50:45Z","type":"conference","intvolume":"       118","date_created":"2023-02-07T21:06:24Z","article_number":"133102","language":[{"iso":"ger"}],"department":[{"_id":"623"}],"user_id":"71124","author":[{"full_name":"Tuktamyshev, A","first_name":"A","last_name":"Tuktamyshev"},{"full_name":"Fedorov, A","first_name":"A","last_name":"Fedorov"},{"last_name":"Bietti","first_name":"S","full_name":"Bietti, S"},{"last_name":"Vichi","full_name":"Vichi, S","first_name":"S"},{"full_name":" Zeuner, K.D","first_name":"K.D","last_name":" Zeuner"},{"last_name":"Jöns","full_name":"Jöns, Klaus D.","id":"85353","first_name":"Klaus D."},{"first_name":"D","full_name":" Chrastina, D","last_name":" Chrastina"},{"first_name":"S","full_name":"Tsukamoto, S","last_name":"Tsukamoto"},{"last_name":"Zwiller","first_name":"V","full_name":"Zwiller, V"},{"full_name":"Gurioli, M","first_name":"M","last_name":"Gurioli"},{"last_name":"Sanguinetti","first_name":"S","full_name":"Sanguinetti, S"}],"status":"public","title":"Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates","volume":118,"issue":"13","citation":{"apa":"Tuktamyshev, A., Fedorov, A., Bietti, S., Vichi, S.,  Zeuner, K. D., Jöns, K. D.,  Chrastina, D., Tsukamoto, S., Zwiller, V., Gurioli, M., &#38; Sanguinetti, S. (2021). <i>Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates</i> (No. 133102; Vol. 118, Issue 13).","ama":"Tuktamyshev A, Fedorov A, Bietti S, et al. Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates. 2021;118(13).","mla":"Tuktamyshev, A., et al. <i>Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates</i>. no. 13, 133102, 2021.","ieee":"A. Tuktamyshev <i>et al.</i>, “Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates,” vol. 118, no. 13. 2021.","bibtex":"@article{Tuktamyshev_Fedorov_Bietti_Vichi_ Zeuner_Jöns_ Chrastina_Tsukamoto_Zwiller_Gurioli_et al._2021, series={Appl. Phys. Lett.}, title={Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates}, volume={118}, number={13133102}, author={Tuktamyshev, A and Fedorov, A and Bietti, S and Vichi, S and  Zeuner, K.D and Jöns, Klaus D. and  Chrastina, D and Tsukamoto, S and Zwiller, V and Gurioli, M and et al.}, year={2021}, collection={Appl. Phys. Lett.} }","chicago":"Tuktamyshev, A, A Fedorov, S Bietti, S Vichi, K.D  Zeuner, Klaus D. Jöns, D  Chrastina, et al. “Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates.” Appl. Phys. Lett., 2021.","short":"A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K.D.  Zeuner, K.D. Jöns, D.  Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, S. Sanguinetti, 118 (2021)."},"series_title":"Appl. Phys. Lett.","publication_status":"published","_id":"41886","year":"2021"}