{"article_type":"original","publication":"physica status solidi (c)","date_updated":"2022-01-06T07:00:33Z","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"286"}],"publication_identifier":{"issn":["1862-6351","1610-1642"]},"title":"Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)","_id":"4196","volume":7,"citation":{"mla":"Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i>, vol. 7, no. 1, Wiley, 2009, pp. 104–07, doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>.","ama":"Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>physica status solidi (c)</i>. 2009;7(1):104-107. doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>","bibtex":"@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>}, number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak, Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2009}, pages={104–107} }","ieee":"E. Tschumak <i>et al.</i>, “Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001),” <i>physica status solidi (c)</i>, vol. 7, no. 1, pp. 104–107, 2009.","chicago":"Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i> 7, no. 1 (2009): 104–7. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>.","short":"E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.","apa":"Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., &#38; As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>Physica Status Solidi (C)</i>, <i>7</i>(1), 104–107. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>"},"user_id":"55706","intvolume":"         7","status":"public","year":"2009","author":[{"first_name":"Elena","last_name":"Tschumak","full_name":"Tschumak, Elena"},{"id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg"},{"full_name":"Bürger, M.","last_name":"Bürger","first_name":"M."},{"last_name":"Lischka","full_name":"Lischka, K.","first_name":"K."},{"last_name":"Nagasawa","full_name":"Nagasawa, H.","first_name":"H."},{"first_name":"M.","last_name":"Abe","full_name":"Abe, M."},{"full_name":"As, Donald","last_name":"As","first_name":"Donald"}],"publisher":"Wiley","doi":"10.1002/pssc.200982615","page":"104-107","file":[{"file_id":"4197","file_name":"Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf","success":1,"date_updated":"2018-08-28T12:16:11Z","date_created":"2018-08-28T12:16:11Z","file_size":213837,"creator":"hclaudia","content_type":"application/pdf","access_level":"closed","relation":"main_file"}],"ddc":["530"],"issue":"1","publication_status":"published","file_date_updated":"2018-08-28T12:16:11Z","date_created":"2018-08-28T12:15:20Z","has_accepted_license":"1","abstract":[{"lang":"eng","text":"The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface."}]}