{"article_type":"original","date_updated":"2022-01-06T07:00:34Z","type":"journal_article","publication":"Journal of Applied Physics","language":[{"iso":"eng"}],"title":"Characterization of unintentional doping in nonpolar GaN","_id":"4202","department":[{"_id":"15"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"volume":107,"user_id":"55706","citation":{"apa":"Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., &#38; Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>, <i>107</i>(2). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>","short":"T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).","chicago":"Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i> 107, no. 2 (2010). <a href=\"https://doi.org/10.1063/1.3284944\">https://doi.org/10.1063/1.3284944</a>.","ieee":"T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 2010.","mla":"Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” <i>Journal of Applied Physics</i>, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>.","bibtex":"@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }","ama":"Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. <i>Journal of Applied Physics</i>. 2010;107(2). doi:<a href=\"https://doi.org/10.1063/1.3284944\">10.1063/1.3284944</a>"},"status":"public","intvolume":"       107","year":"2010","extern":"1","publisher":"AIP Publishing","author":[{"last_name":"Zhu","full_name":"Zhu, Tongtong","first_name":"Tongtong"},{"first_name":"Carol F.","full_name":"Johnston, Carol F.","last_name":"Johnston"},{"first_name":"Maik","last_name":"Häberlen","full_name":"Häberlen, Maik"},{"first_name":"Menno J.","last_name":"Kappers","full_name":"Kappers, Menno J."},{"last_name":"Oliver","full_name":"Oliver, Rachel A.","first_name":"Rachel A."}],"article_number":"023503","doi":"10.1063/1.3284944","file":[{"file_id":"4203","file_name":"Characterization of unintentional doping in nonpolar GaN.pdf","success":1,"date_created":"2018-08-28T12:28:22Z","date_updated":"2018-08-28T12:28:22Z","creator":"hclaudia","file_size":688753,"content_type":"application/pdf","access_level":"closed","relation":"main_file"}],"ddc":["530"],"publication_status":"published","issue":"2","file_date_updated":"2018-08-28T12:28:22Z","date_created":"2018-08-28T12:27:34Z","has_accepted_license":"1","abstract":[{"lang":"eng","text":"Unintentional doping in nonpolar a-plane \u0001112¯0\u0002 gallium nitride \u0001GaN\u0002 grown on r-plane \u000111¯02\u0002\r\nsapphire using a three-dimensional \u00013D\u0002–two-dimensional \u00012D\u0002 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \u0001SCM\u0002. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \u00012.5\u00010.3\u0002\u00021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\u0001BSFs\u0002 and prismatic stacking faults \u0001PSFs\u0002, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface."}]}