{"date_created":"2023-02-13T08:19:11Z","language":[{"iso":"eng"}],"department":[{"_id":"623"}],"date_updated":"2023-02-13T08:44:48Z","author":[{"full_name":" Richter, D","first_name":"D","last_name":" Richter"},{"full_name":"Hafenbrak, R","last_name":"Hafenbrak","first_name":"R"},{"first_name":"Klaus D.","last_name":"Jöns","id":"85353","full_name":"Jöns, Klaus D."},{"full_name":"Schulz, W-M","last_name":"Schulz","first_name":"W-M"},{"first_name":"M","last_name":"Eichfelder","full_name":"Eichfelder, M"},{"full_name":"Heldmaier, M","first_name":"M","last_name":"Heldmaier"},{"first_name":"R","last_name":"Roßbach","full_name":"Roßbach, R"},{"first_name":"M","last_name":"Jetter","full_name":"Jetter, M"},{"last_name":"Michler","first_name":"P","full_name":"Michler, P"}],"status":"public","intvolume":"        21","article_number":"125606 ","citation":{"ama":"Richter D, Hafenbrak R, Jöns KD, et al. Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths. 2010;21.","apa":"Richter, D., Hafenbrak, R., Jöns, K. D., Schulz, W.-M., Eichfelder, M., Heldmaier, M., Roßbach, R., Jetter, M., &#38; Michler, P. (2010). <i>Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths</i> (No. 125606; Vol. 21).","bibtex":"@article{ Richter_Hafenbrak_Jöns_Schulz_Eichfelder_Heldmaier_Roßbach_Jetter_Michler_2010, series={Nanotechnology }, title={Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths}, volume={21}, number={125606}, author={ Richter, D and Hafenbrak, R and Jöns, Klaus D. and Schulz, W-M and Eichfelder, M and Heldmaier, M and Roßbach, R and Jetter, M and Michler, P}, year={2010}, collection={Nanotechnology } }","chicago":"Richter, D, R Hafenbrak, Klaus D. Jöns, W-M Schulz, M Eichfelder, M Heldmaier, R Roßbach, M Jetter, and P Michler. “Low-Density MOVPE Grown InGaAs QDs Exhibiting Ultra-Narrow Single Exciton Linewidths.” Nanotechnology , 2010.","ieee":"D.  Richter <i>et al.</i>, “Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths,” vol. 21. 2010.","mla":"Richter, D., et al. <i>Low-Density MOVPE Grown InGaAs QDs Exhibiting Ultra-Narrow Single Exciton Linewidths</i>. 125606, 2010.","short":"D.  Richter, R. Hafenbrak, K.D. Jöns, W.-M. Schulz, M. Eichfelder, M. Heldmaier, R. Roßbach, M. Jetter, P. Michler, 21 (2010)."},"series_title":"Nanotechnology ","year":"2010","user_id":"71124","type":"conference","volume":21,"title":"Low-density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths","_id":"42030"}