{"intvolume":"        83","type":"conference","user_id":"71124","date_created":"2023-02-13T08:26:54Z","department":[{"_id":"623"}],"status":"public","author":[{"full_name":"Plumhof, J.D","last_name":"Plumhof","first_name":"J.D"},{"last_name":" Krápek","first_name":"V","full_name":" Krápek, V"},{"full_name":"Ding, F","first_name":"F","last_name":"Ding"},{"id":"85353","full_name":"Jöns, Klaus D.","last_name":"Jöns","first_name":"Klaus D."},{"last_name":"Hafenbrak","first_name":"R","full_name":"Hafenbrak, R"},{"full_name":" Klenovský, P","last_name":" Klenovský","first_name":"P"},{"full_name":"Herklotz, A","last_name":"Herklotz","first_name":"A"},{"last_name":" Dörr","first_name":"K","full_name":" Dörr, K"},{"first_name":"P","last_name":" Michler ","full_name":" Michler , P"},{"first_name":"A","last_name":"Rastelli,","full_name":"Rastelli,, A"},{"full_name":"Schmidt, O.G","first_name":"O.G","last_name":"Schmidt"}],"_id":"42031","series_title":"Phys. Rev. B","citation":{"chicago":"Plumhof, J.D, V  Krápek, F Ding, Klaus D. Jöns, R Hafenbrak, P  Klenovský, A Herklotz, et al. “Strain-Induced Anticrossing of Bright Exciton Levels in Single Self-Assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs Quantum Dots.” Phys. Rev. B, 2011.","mla":"Plumhof, J. D., et al. <i>Strain-Induced Anticrossing of Bright Exciton Levels in Single Self-Assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs Quantum Dots</i>. 121302, 2011.","ieee":"J. D. Plumhof <i>et al.</i>, “Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots,” vol. 83. 2011.","apa":"Plumhof, J. D.,  Krápek, V., Ding, F., Jöns, K. D., Hafenbrak, R.,  Klenovský, P., Herklotz, A.,  Dörr, K.,  Michler , P., Rastelli, A., &#38; Schmidt, O. G. (2011). <i>Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots</i> (No. 121302; Vol. 83).","ama":"Plumhof JD,  Krápek V, Ding F, et al. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots. 2011;83.","short":"J.D. Plumhof, V.  Krápek, F. Ding, K.D. Jöns, R. Hafenbrak, P.  Klenovský, A. Herklotz, K.  Dörr, P.  Michler , A. Rastelli,, O.G. Schmidt, 83 (2011).","bibtex":"@article{Plumhof_ Krápek_Ding_Jöns_Hafenbrak_ Klenovský_Herklotz_ Dörr_ Michler _Rastelli,_et al._2011, series={Phys. Rev. B}, title={Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots}, volume={83}, number={121302}, author={Plumhof, J.D and  Krápek, V and Ding, F and Jöns, Klaus D. and Hafenbrak, R and  Klenovský, P and Herklotz, A and  Dörr, K and  Michler , P and Rastelli, A and et al.}, year={2011}, collection={Phys. Rev. B} }"},"language":[{"iso":"eng"}],"title":"Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots","article_number":"121302","volume":83,"date_updated":"2023-02-13T08:44:35Z","year":"2011"}