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<titleInfo><title>Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots</title></titleInfo>





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  <namePart type="given">J.D</namePart>
  <namePart type="family">Plumhof</namePart>
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  <namePart type="family"> Krápek</namePart>
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  <namePart type="family">Ding</namePart>
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  <namePart type="given">Klaus D.</namePart>
  <namePart type="family">Jöns</namePart>
  <role><roleTerm type="text">author</roleTerm> </role><identifier type="local">85353</identifier></name>
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  <namePart type="family">Hafenbrak</namePart>
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  <namePart type="family"> Klenovský</namePart>
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  <namePart type="family"> Dörr</namePart>
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  <namePart type="given">P</namePart>
  <namePart type="family"> Michler </namePart>
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  <namePart type="family">Rastelli,</namePart>
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  <namePart type="given">O.G</namePart>
  <namePart type="family">Schmidt</namePart>
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<originInfo><dateIssued encoding="w3cdtf">2011</dateIssued>
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<language><languageTerm authority="iso639-2b" type="code">eng</languageTerm>
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<part><detail type="volume"><number>83</number></detail>
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<short>J.D. Plumhof, V.  Krápek, F. Ding, K.D. Jöns, R. Hafenbrak, P.  Klenovský, A. Herklotz, K.  Dörr, P.  Michler , A. Rastelli,, O.G. Schmidt, 83 (2011).</short>
<chicago>Plumhof, J.D, V  Krápek, F Ding, Klaus D. Jöns, R Hafenbrak, P  Klenovský, A Herklotz, et al. “Strain-Induced Anticrossing of Bright Exciton Levels in Single Self-Assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs Quantum Dots.” Phys. Rev. B, 2011.</chicago>
<ieee>J. D. Plumhof &lt;i&gt;et al.&lt;/i&gt;, “Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots,” vol. 83. 2011.</ieee>
<apa>Plumhof, J. D.,  Krápek, V., Ding, F., Jöns, K. D., Hafenbrak, R.,  Klenovský, P., Herklotz, A.,  Dörr, K.,  Michler , P., Rastelli, A., &amp;#38; Schmidt, O. G. (2011). &lt;i&gt;Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots&lt;/i&gt; (No. 121302; Vol. 83).</apa>
<bibtex>@article{Plumhof_ Krápek_Ding_Jöns_Hafenbrak_ Klenovský_Herklotz_ Dörr_ Michler _Rastelli,_et al._2011, series={Phys. Rev. B}, title={Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots}, volume={83}, number={121302}, author={Plumhof, J.D and  Krápek, V and Ding, F and Jöns, Klaus D. and Hafenbrak, R and  Klenovský, P and Herklotz, A and  Dörr, K and  Michler , P and Rastelli, A and et al.}, year={2011}, collection={Phys. Rev. B} }</bibtex>
<ama>Plumhof JD,  Krápek V, Ding F, et al. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs quantum dots. 2011;83.</ama>
<mla>Plumhof, J. D., et al. &lt;i&gt;Strain-Induced Anticrossing of Bright Exciton Levels in Single Self-Assembled GaAs/Al(x)Ga(1−x)As and In(x)Ga(1−x)As/GaAs Quantum Dots&lt;/i&gt;. 121302, 2011.</mla>
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