{"ddc":["530"],"issue":"7","publication_status":"published","doi":"10.1002/pssb.200983537","file":[{"access_level":"closed","content_type":"application/pdf","relation":"main_file","date_created":"2018-08-28T12:43:31Z","date_updated":"2018-08-28T12:43:31Z","creator":"hclaudia","file_size":911931,"success":1,"file_id":"4211","file_name":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf"}],"page":"1753-1756","has_accepted_license":"1","abstract":[{"lang":"eng","text":"In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties."}],"file_date_updated":"2018-08-28T12:43:31Z","date_created":"2018-08-28T12:42:58Z","language":[{"iso":"eng"}],"publication":"physica status solidi (b)","type":"journal_article","date_updated":"2022-01-06T07:00:36Z","article_type":"original","year":"2010","intvolume":"       247","status":"public","publisher":"Wiley","author":[{"full_name":"Häberlen, Maik","last_name":"Häberlen","first_name":"Maik"},{"first_name":"Dandan","full_name":"Zhu, Dandan","last_name":"Zhu"},{"full_name":"McAleese, Clifford","last_name":"McAleese","first_name":"Clifford"},{"last_name":"Zhu","full_name":"Zhu, Tongtong","first_name":"Tongtong"},{"last_name":"Kappers","full_name":"Kappers, Menno J.","first_name":"Menno J."},{"full_name":"Humphreys, Colin J.","last_name":"Humphreys","first_name":"Colin J."}],"volume":247,"publication_identifier":{"issn":["0370-1972","1521-3951"]},"department":[{"_id":"15"}],"_id":"4210","title":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer","citation":{"mla":"Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i>, vol. 247, no. 7, Wiley, 2010, pp. 1753–56, doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>.","ama":"Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>physica status solidi (b)</i>. 2010;247(7):1753-1756. doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>","ieee":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1753–1756, 2010.","apa":"Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>Physica Status Solidi (B)</i>, <i>247</i>(7), 1753–1756. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>","bibtex":"@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }","chicago":"Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i> 247, no. 7 (2010): 1753–56. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>.","short":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756."},"user_id":"55706"}