{"doi":"10.1016/j.jcrysgro.2010.08.041","abstract":[{"lang":"eng","text":"Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070°C. Most dislocations were partial\r\ndislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface throughout their length, although\r\nthe total dislocation density remained unchanged. These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction 1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed on the sample surface.\r\nThere was also an increase in the density of unintentionally n-type doped electrically conductive\r\ninclined features present at the film–substrate interface (as observed in cross-section using scanning\r\ncapacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures can affect both the microstructure and the electrical properties of non-polar GaN films."}],"volume":312,"ddc":["530"],"file":[{"relation":"main_file","content_type":"application/pdf","date_created":"2018-08-28T12:50:07Z","success":1,"file_id":"4215","access_level":"closed","date_updated":"2018-08-28T12:50:07Z","file_size":1218752,"file_name":"The effects of annealing on non-polar (11-20) a-plane GaN films.pdf","creator":"hclaudia"}],"date_created":"2018-08-28T12:49:39Z","issue":"23","publication":"Journal of Crystal Growth","file_date_updated":"2018-08-28T12:50:07Z","page":"3536-3543","type":"journal_article","year":"2010","publication_identifier":{"issn":["0022-0248"]},"_id":"4214","intvolume":"       312","status":"public","author":[{"first_name":"Rui","full_name":"Hao, Rui","last_name":"Hao"},{"first_name":"T.","last_name":"Zhu","full_name":"Zhu, T."},{"last_name":"Häberlen","full_name":"Häberlen, M.","first_name":"M."},{"first_name":"T.Y.","last_name":"Chang","full_name":"Chang, T.Y."},{"first_name":"M.J.","last_name":"Kappers","full_name":"Kappers, M.J."},{"full_name":"Oliver, R.A.","last_name":"Oliver","first_name":"R.A."},{"last_name":"Humphreys","full_name":"Humphreys, C.J.","first_name":"C.J."},{"first_name":"M.A.","full_name":"Moram, M.A.","last_name":"Moram"}],"article_type":"original","user_id":"55706","citation":{"mla":"Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>.","apa":"Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A., … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>, <i>312</i>(23), 3536–3543. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>","ieee":"R. Hao <i>et al.</i>, “The effects of annealing on non-polar (112¯0) a-plane GaN films,” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, pp. 3536–3543, 2010.","short":"R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.","bibtex":"@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>}, number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }","chicago":"Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i> 312, no. 23 (2010): 3536–43. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>.","ama":"Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>. 2010;312(23):3536-3543. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>"},"publisher":"Elsevier BV","department":[{"_id":"15"}],"title":"The effects of annealing on non-polar (112¯0) a-plane GaN films","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:37Z","has_accepted_license":"1","publication_status":"published"}