{"citation":{"short":"F. Zirkelbach, J. Lindner, K. Nordlund, B. Stritzker, Materials Science and Engineering: B 159–160 (2008) 149–152.","chicago":"Zirkelbach, F., Jörg Lindner, K. Nordlund, and B. Stritzker. “Molecular Dynamics Simulation of Defect Formation and Precipitation in Heavily Carbon Doped Silicon.” <i>Materials Science and Engineering: B</i> 159–160 (2008): 149–52. <a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">https://doi.org/10.1016/j.mseb.2008.10.010</a>.","apa":"Zirkelbach, F., Lindner, J., Nordlund, K., &#38; Stritzker, B. (2008). Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon. <i>Materials Science and Engineering: B</i>, <i>159</i>–<i>160</i>, 149–152. <a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">https://doi.org/10.1016/j.mseb.2008.10.010</a>","ieee":"F. Zirkelbach, J. Lindner, K. Nordlund, and B. Stritzker, “Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon,” <i>Materials Science and Engineering: B</i>, vol. 159–160, pp. 149–152, 2008.","bibtex":"@article{Zirkelbach_Lindner_Nordlund_Stritzker_2008, title={Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon}, volume={159–160}, DOI={<a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">10.1016/j.mseb.2008.10.010</a>}, journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={Zirkelbach, F. and Lindner, Jörg and Nordlund, K. and Stritzker, B.}, year={2008}, pages={149–152} }","mla":"Zirkelbach, F., et al. “Molecular Dynamics Simulation of Defect Formation and Precipitation in Heavily Carbon Doped Silicon.” <i>Materials Science and Engineering: B</i>, vol. 159–160, Elsevier BV, 2008, pp. 149–52, doi:<a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">10.1016/j.mseb.2008.10.010</a>.","ama":"Zirkelbach F, Lindner J, Nordlund K, Stritzker B. Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon. <i>Materials Science and Engineering: B</i>. 2008;159-160:149-152. doi:<a href=\"https://doi.org/10.1016/j.mseb.2008.10.010\">10.1016/j.mseb.2008.10.010</a>"},"publication":"Materials Science and Engineering: B","publication_status":"published","publication_identifier":{"issn":["0921-5107"]},"type":"journal_article","extern":"1","volume":"159-160","date_updated":"2022-01-06T07:00:39Z","page":"149-152","publisher":"Elsevier BV","_id":"4229","language":[{"iso":"eng"}],"title":"Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon","author":[{"first_name":"F.","last_name":"Zirkelbach","full_name":"Zirkelbach, F."},{"last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797"},{"first_name":"K.","full_name":"Nordlund, K.","last_name":"Nordlund"},{"full_name":"Stritzker, B.","last_name":"Stritzker","first_name":"B."}],"year":"2008","user_id":"55706","status":"public","date_created":"2018-08-28T13:18:05Z","abstract":[{"text":"The precipitation process of silicon carbide in heavily carbon doped silicon is not yet fully understood.\r\nHigh resolution transmission electron microscopy observations suggest that in a first step carbon atoms\r\nform C Si dumbbells on regular Si lattice sites which agglomerate into large clusters. In a second step,\r\nwhen the cluster size reaches a radius of a fewnm, the high interfacial energy due to the SiC/Si lattice misfit\r\nof almost 20% is overcome and the precipitation occurs. By simulation, details of the precipitation process\r\ncan be obtained on the atomic level. A recently proposed parametrization of a Tersoff-like bond order\r\npotential is used to model the system appropriately. Preliminary results gained by molecular dynamics\r\nsimulations using this potential are presented.","lang":"eng"}],"file_date_updated":"2018-08-28T13:18:34Z","file":[{"file_size":477318,"file_id":"4230","success":1,"content_type":"application/pdf","file_name":"Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon.pdf","date_updated":"2018-08-28T13:18:34Z","creator":"hclaudia","date_created":"2018-08-28T13:18:34Z","access_level":"closed","relation":"main_file"}],"has_accepted_license":"1","article_type":"original","ddc":["530"],"doi":"10.1016/j.mseb.2008.10.010"}