{"doi":"10.1016/j.mseb.2008.10.010","file":[{"relation":"main_file","access_level":"closed","content_type":"application/pdf","file_size":477318,"creator":"hclaudia","date_created":"2018-08-28T13:18:34Z","date_updated":"2018-08-28T13:18:34Z","success":1,"file_name":"Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon.pdf","file_id":"4230"}],"page":"149-152","ddc":["530"],"publication_status":"published","file_date_updated":"2018-08-28T13:18:34Z","date_created":"2018-08-28T13:18:05Z","has_accepted_license":"1","abstract":[{"lang":"eng","text":"The precipitation process of silicon carbide in heavily carbon doped silicon is not yet fully understood.\r\nHigh resolution transmission electron microscopy observations suggest that in a first step carbon atoms\r\nform C Si dumbbells on regular Si lattice sites which agglomerate into large clusters. In a second step,\r\nwhen the cluster size reaches a radius of a fewnm, the high interfacial energy due to the SiC/Si lattice misfit\r\nof almost 20% is overcome and the precipitation occurs. By simulation, details of the precipitation process\r\ncan be obtained on the atomic level. A recently proposed parametrization of a Tersoff-like bond order\r\npotential is used to model the system appropriately. Preliminary results gained by molecular dynamics\r\nsimulations using this potential are presented."}],"article_type":"original","type":"journal_article","date_updated":"2022-01-06T07:00:39Z","publication":"Materials Science and Engineering: B","language":[{"iso":"eng"}],"_id":"4229","title":"Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon","publication_identifier":{"issn":["0921-5107"]},"volume":"159-160","user_id":"55706","citation":{"ieee":"F. Zirkelbach, J. Lindner, K. Nordlund, and B. Stritzker, “Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon,” Materials Science and Engineering: B, vol. 159–160, pp. 149–152, 2008.","ama":"Zirkelbach F, Lindner J, Nordlund K, Stritzker B. Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon. Materials Science and Engineering: B. 2008;159-160:149-152. doi:10.1016/j.mseb.2008.10.010","mla":"Zirkelbach, F., et al. “Molecular Dynamics Simulation of Defect Formation and Precipitation in Heavily Carbon Doped Silicon.” Materials Science and Engineering: B, vol. 159–160, Elsevier BV, 2008, pp. 149–52, doi:10.1016/j.mseb.2008.10.010.","apa":"Zirkelbach, F., Lindner, J., Nordlund, K., & Stritzker, B. (2008). Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon. Materials Science and Engineering: B, 159160, 149–152. https://doi.org/10.1016/j.mseb.2008.10.010","bibtex":"@article{Zirkelbach_Lindner_Nordlund_Stritzker_2008, title={Molecular dynamics simulation of defect formation and precipitation in heavily carbon doped silicon}, volume={159–160}, DOI={10.1016/j.mseb.2008.10.010}, journal={Materials Science and Engineering: B}, publisher={Elsevier BV}, author={Zirkelbach, F. and Lindner, Jörg and Nordlund, K. and Stritzker, B.}, year={2008}, pages={149–152} }","short":"F. Zirkelbach, J. Lindner, K. Nordlund, B. Stritzker, Materials Science and Engineering: B 159–160 (2008) 149–152.","chicago":"Zirkelbach, F., Jörg Lindner, K. Nordlund, and B. Stritzker. “Molecular Dynamics Simulation of Defect Formation and Precipitation in Heavily Carbon Doped Silicon.” Materials Science and Engineering: B 159–160 (2008): 149–52. https://doi.org/10.1016/j.mseb.2008.10.010."},"status":"public","year":"2008","extern":"1","publisher":"Elsevier BV","author":[{"full_name":"Zirkelbach, F.","last_name":"Zirkelbach","first_name":"F."},{"first_name":"Jörg","id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg"},{"full_name":"Nordlund, K.","last_name":"Nordlund","first_name":"K."},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."}]}