{"type":"conference","file":[{"file_id":"4313","date_updated":"2018-08-30T09:02:35Z","access_level":"closed","content_type":"application/pdf","date_created":"2018-08-30T09:02:35Z","file_size":908095,"file_name":"2011 Pochwala,Duc,Förstner,Meier T_Intensity dependence of optically-induced injection currents in semiconductor quantum wells.pdf","success":1,"creator":"hclaudia","relation":"main_file"}],"conference":{"name":"Qantum Electronics and Laser Science","location":"Baltimore, Maryland (USA)","start_date":"2011-05-01","end_date":"2011-05-06"},"_id":"4312","date_updated":"2023-04-19T10:47:00Z","keyword":["tet_topic_qw"],"publisher":"Optical Society of America","file_date_updated":"2018-08-30T09:02:35Z","abstract":[{"text":"The intensity dependence of optically-induced injection currents in semiconductor quantum wells is investigated numerically. Oscillatory behavior of the electron charge current transients as function of intensity and time is predicted and explained.","lang":"eng"}],"publication_identifier":{"isbn":["9781557529107"],"issn":["2160-8989 "]},"author":[{"first_name":"Michal","last_name":"Pochwala","full_name":"Pochwala, Michal"},{"first_name":"Huynh Thanh","last_name":"Duc","full_name":"Duc, Huynh Thanh"},{"first_name":"Jens","last_name":"Förstner","full_name":"Förstner, Jens","id":"158","orcid":"0000-0001-7059-9862"},{"id":"344","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","last_name":"Meier","first_name":"Torsten"}],"date_created":"2018-08-30T08:58:26Z","status":"public","ddc":["530"],"has_accepted_license":"1","title":"Intensity dependence of optically-induced injection currents in semiconductor quantum wells","year":"2011","article_number":"QMK4","publication":"CLEO:2011 - Laser Applications to Photonic Applications","doi":"10.1364/qels.2011.qmk4","user_id":"49063","language":[{"iso":"eng"}],"publication_status":"published","department":[{"_id":"15"},{"_id":"293"},{"_id":"230"},{"_id":"170"}],"citation":{"chicago":"Pochwala, Michal, Huynh Thanh Duc, Jens Förstner, and Torsten Meier. “Intensity Dependence of Optically-Induced Injection Currents in Semiconductor Quantum Wells.” In CLEO:2011 - Laser Applications to Photonic Applications. Optical Society of America, 2011. https://doi.org/10.1364/qels.2011.qmk4.","apa":"Pochwala, M., Duc, H. T., Förstner, J., & Meier, T. (2011). Intensity dependence of optically-induced injection currents in semiconductor quantum wells. CLEO:2011 - Laser Applications to Photonic Applications, Article QMK4. Qantum Electronics and Laser Science, Baltimore, Maryland (USA). https://doi.org/10.1364/qels.2011.qmk4","bibtex":"@inproceedings{Pochwala_Duc_Förstner_Meier_2011, title={Intensity dependence of optically-induced injection currents in semiconductor quantum wells}, DOI={10.1364/qels.2011.qmk4}, number={QMK4}, booktitle={CLEO:2011 - Laser Applications to Photonic Applications}, publisher={Optical Society of America}, author={Pochwala, Michal and Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, year={2011} }","short":"M. Pochwala, H.T. Duc, J. Förstner, T. Meier, in: CLEO:2011 - Laser Applications to Photonic Applications, Optical Society of America, 2011.","ieee":"M. Pochwala, H. T. Duc, J. Förstner, and T. Meier, “Intensity dependence of optically-induced injection currents in semiconductor quantum wells,” presented at the Qantum Electronics and Laser Science, Baltimore, Maryland (USA), 2011, doi: 10.1364/qels.2011.qmk4.","ama":"Pochwala M, Duc HT, Förstner J, Meier T. Intensity dependence of optically-induced injection currents in semiconductor quantum wells. In: CLEO:2011 - Laser Applications to Photonic Applications. Optical Society of America; 2011. doi:10.1364/qels.2011.qmk4","mla":"Pochwala, Michal, et al. “Intensity Dependence of Optically-Induced Injection Currents in Semiconductor Quantum Wells.” CLEO:2011 - Laser Applications to Photonic Applications, QMK4, Optical Society of America, 2011, doi:10.1364/qels.2011.qmk4."}}