{"publisher":"American Institute of Physics","type":"journal_article","citation":{"ama":"Schlichenmaier C, Grüning H, Thränhardt A, et al. Type I-type II transition in InGaAs–GaNAs heterostructures. <i>Applied Physics Letters</i>. 2005;86(8). doi:<a href=\"https://doi.org/American Institute of Physics\">American Institute of Physics</a>","bibtex":"@article{Schlichenmaier_Grüning_Thränhardt_Klar_Kunert_Volz_Stolz_Heimbrodt_Meier_Koch_2005, title={Type I-type II transition in InGaAs–GaNAs heterostructures}, volume={86}, DOI={<a href=\"https://doi.org/American Institute of Physics\">American Institute of Physics</a>}, number={8081903}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Schlichenmaier, C. and Grüning, H. and Thränhardt, A. and Klar, P.J. and Kunert, B. and Volz, K. and Stolz, W. and Heimbrodt, W. and Meier, Torsten and Koch, S.W.}, year={2005} }","ieee":"C. Schlichenmaier <i>et al.</i>, “Type I-type II transition in InGaAs–GaNAs heterostructures,” <i>Applied Physics Letters</i>, vol. 86, no. 8, Art. no. 081903, 2005, doi: <a href=\"https://doi.org/American Institute of Physics\">American Institute of Physics</a>.","short":"C. Schlichenmaier, H. Grüning, A. Thränhardt, P.J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S.W. Koch, Applied Physics Letters 86 (2005).","apa":"Schlichenmaier, C., Grüning, H., Thränhardt, A., Klar, P. J., Kunert, B., Volz, K., Stolz, W., Heimbrodt, W., Meier, T., &#38; Koch, S. W. (2005). Type I-type II transition in InGaAs–GaNAs heterostructures. <i>Applied Physics Letters</i>, <i>86</i>(8), Article 081903. <a href=\"https://doi.org/American Institute of Physics\">https://doi.org/American Institute of Physics</a>","mla":"Schlichenmaier, C., et al. “Type I-Type II Transition in InGaAs–GaNAs Heterostructures.” <i>Applied Physics Letters</i>, vol. 86, no. 8, 081903, American Institute of Physics, 2005, doi:<a href=\"https://doi.org/American Institute of Physics\">American Institute of Physics</a>.","chicago":"Schlichenmaier, C., H. Grüning, A. Thränhardt, P.J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, Torsten Meier, and S.W. Koch. “Type I-Type II Transition in InGaAs–GaNAs Heterostructures.” <i>Applied Physics Letters</i> 86, no. 8 (2005). <a href=\"https://doi.org/American Institute of Physics\">https://doi.org/American Institute of Physics</a>."},"article_number":"081903","_id":"43272","status":"public","year":"2005","user_id":"49063","publication":"Applied Physics Letters","language":[{"iso":"eng"}],"volume":86,"department":[{"_id":"293"}],"doi":"American Institute of Physics","date_created":"2023-04-01T23:04:44Z","publication_status":"published","author":[{"first_name":"C.","last_name":"Schlichenmaier","full_name":"Schlichenmaier, C."},{"first_name":"H.","full_name":"Grüning, H.","last_name":"Grüning"},{"first_name":"A.","full_name":"Thränhardt, A.","last_name":"Thränhardt"},{"full_name":"Klar, P.J.","last_name":"Klar","first_name":"P.J."},{"first_name":"B.","last_name":"Kunert","full_name":"Kunert, B."},{"last_name":"Volz","full_name":"Volz, K.","first_name":"K."},{"first_name":"W.","last_name":"Stolz","full_name":"Stolz, W."},{"first_name":"W.","full_name":"Heimbrodt, W.","last_name":"Heimbrodt"},{"last_name":"Meier","full_name":"Meier, Torsten","id":"344","first_name":"Torsten","orcid":"0000-0001-8864-2072"},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."}],"main_file_link":[{"url":"https://aip.scitation.org/doi/abs/10.1063/1.1870132"}],"title":"Type I-type II transition in InGaAs–GaNAs heterostructures","extern":"1","abstract":[{"lang":"eng","text":"Optical interband transitions in a series of In0.23Ga0.77As–GaN𝑥As1−𝑥 quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5)eV is extracted for this heterostructure system.This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), by AFOSR (F49620-02-1-0380) and the Max-Planck Research Prize of the Max-Planck Society and Humboldt Foundation. We thank Stanko Tomić (Daresbury Laboratory) for fruitful discussions.\r\n"}],"intvolume":"        86","issue":"8","date_updated":"2023-04-01T23:04:46Z"}