{"publication":"Physical Review B","language":[{"iso":"eng"}],"type":"journal_article","publisher":"American Physical Society","article_number":"13088","citation":{"short":"T. Meier, S. Weiser, J. Möbius, A. Euteneuer, E.J. Mayer, W. Stolz, M. Hofmann, W.W. Rühle, P. Thomas, S.W. Koch, Physical Review B 61 (2000).","ama":"Meier T, Weiser S, Möbius J, et al. Disorder-induced Dephasing in Semiconductors. <i>Physical Review B</i>. 2000;61(19). doi:<a href=\"https://doi.org/10.1103/PhysRevB.61.13088\">10.1103/PhysRevB.61.13088</a>","bibtex":"@article{Meier_Weiser_Möbius_Euteneuer_Mayer_Stolz_Hofmann_Rühle_Thomas_Koch_2000, title={Disorder-induced Dephasing in Semiconductors}, volume={61}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.61.13088\">10.1103/PhysRevB.61.13088</a>}, number={1913088}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Weiser, S. and Möbius, J. and Euteneuer, A. and Mayer, E.J. and Stolz, W. and Hofmann, M. and Rühle, W.W. and Thomas, P. and Koch, S.W.}, year={2000} }","ieee":"T. Meier <i>et al.</i>, “Disorder-induced Dephasing in Semiconductors,” <i>Physical Review B</i>, vol. 61, no. 19, Art. no. 13088, 2000, doi: <a href=\"https://doi.org/10.1103/PhysRevB.61.13088\">10.1103/PhysRevB.61.13088</a>.","mla":"Meier, Torsten, et al. “Disorder-Induced Dephasing in Semiconductors.” <i>Physical Review B</i>, vol. 61, no. 19, 13088, American Physical Society, 2000, doi:<a href=\"https://doi.org/10.1103/PhysRevB.61.13088\">10.1103/PhysRevB.61.13088</a>.","chicago":"Meier, Torsten, S. Weiser, J. Möbius, A. Euteneuer, E.J. Mayer, W. Stolz, M. Hofmann, W.W. Rühle, P. Thomas, and S.W. Koch. “Disorder-Induced Dephasing in Semiconductors.” <i>Physical Review B</i> 61, no. 19 (2000). <a href=\"https://doi.org/10.1103/PhysRevB.61.13088\">https://doi.org/10.1103/PhysRevB.61.13088</a>.","apa":"Meier, T., Weiser, S., Möbius, J., Euteneuer, A., Mayer, E. J., Stolz, W., Hofmann, M., Rühle, W. W., Thomas, P., &#38; Koch, S. W. (2000). Disorder-induced Dephasing in Semiconductors. <i>Physical Review B</i>, <i>61</i>(19), Article 13088. <a href=\"https://doi.org/10.1103/PhysRevB.61.13088\">https://doi.org/10.1103/PhysRevB.61.13088</a>"},"user_id":"49063","year":"2000","status":"public","_id":"43313","abstract":[{"lang":"eng","text":"Microscopic calculations including energetic disorder and Coulomb correlations up to third order in the laser field are performed. The resulting four-wave-mixing signals show polarization-dependent dephasing induced by diagonal disorder. The correct modeling of this disorder-induced dephasing requires the proper inclusion of Coulomb correlations. The theoretical results are in good qualitative agreement with measurements performed on a variety of quantum-well samples."}],"extern":"1","title":"Disorder-induced Dephasing in Semiconductors","date_updated":"2023-04-02T17:03:58Z","issue":"19","intvolume":"        61","department":[{"_id":"293"}],"volume":61,"main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.61.13088"}],"author":[{"orcid":"0000-0001-8864-2072","id":"344","first_name":"Torsten","full_name":"Meier, Torsten","last_name":"Meier"},{"first_name":"S.","last_name":"Weiser","full_name":"Weiser, S."},{"first_name":"J.","last_name":"Möbius","full_name":"Möbius, J."},{"last_name":"Euteneuer","full_name":"Euteneuer, A.","first_name":"A."},{"last_name":"Mayer","full_name":"Mayer, E.J.","first_name":"E.J."},{"last_name":"Stolz","full_name":"Stolz, W.","first_name":"W."},{"last_name":"Hofmann","full_name":"Hofmann, M.","first_name":"M."},{"full_name":"Rühle, W.W.","last_name":"Rühle","first_name":"W.W."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."}],"publication_status":"published","doi":"10.1103/PhysRevB.61.13088","date_created":"2023-04-02T17:03:55Z"}