{"citation":{"ama":"Meier T, Hader J, Koch M, Rossi F, Linder N. Microscopic theory of the intracollisional field effect in semiconductor superlattices. <i>Physical Review B</i>. 1997;55(20):13799-13807. doi:<a href=\"https://doi.org/10.1103/PhysRevB.55.13799\">10.1103/PhysRevB.55.13799</a>","bibtex":"@article{Meier_Hader_Koch_Rossi_Linder_1997, title={Microscopic theory of the intracollisional field effect in semiconductor superlattices}, volume={55}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.55.13799\">10.1103/PhysRevB.55.13799</a>}, number={20}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Hader, J. and Koch, M. and Rossi, F. and Linder, N.}, year={1997}, pages={13799–13807} }","ieee":"T. Meier, J. Hader, M. Koch, F. Rossi, and N. Linder, “Microscopic theory of the intracollisional field effect in semiconductor superlattices,” <i>Physical Review B</i>, vol. 55, no. 20, pp. 13799–13807, 1997, doi: <a href=\"https://doi.org/10.1103/PhysRevB.55.13799\">10.1103/PhysRevB.55.13799</a>.","short":"T. Meier, J. Hader, M. Koch, F. Rossi, N. Linder, Physical Review B 55 (1997) 13799–13807.","apa":"Meier, T., Hader, J., Koch, M., Rossi, F., &#38; Linder, N. (1997). Microscopic theory of the intracollisional field effect in semiconductor superlattices. <i>Physical Review B</i>, <i>55</i>(20), 13799–13807. <a href=\"https://doi.org/10.1103/PhysRevB.55.13799\">https://doi.org/10.1103/PhysRevB.55.13799</a>","mla":"Meier, Torsten, et al. “Microscopic Theory of the Intracollisional Field Effect in Semiconductor Superlattices.” <i>Physical Review B</i>, vol. 55, no. 20, American Physical Society, 1997, pp. 13799–807, doi:<a href=\"https://doi.org/10.1103/PhysRevB.55.13799\">10.1103/PhysRevB.55.13799</a>.","chicago":"Meier, Torsten, J. Hader, M. Koch, F. Rossi, and N. Linder. “Microscopic Theory of the Intracollisional Field Effect in Semiconductor Superlattices.” <i>Physical Review B</i> 55, no. 20 (1997): 13799–807. <a href=\"https://doi.org/10.1103/PhysRevB.55.13799\">https://doi.org/10.1103/PhysRevB.55.13799</a>."},"type":"journal_article","volume":55,"publisher":"American Physical Society","department":[{"_id":"293"}],"status":"public","_id":"43398","publication_status":"published","date_created":"2023-04-05T11:38:55Z","doi":"10.1103/PhysRevB.55.13799","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.55.13799"}],"user_id":"49063","author":[{"orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","last_name":"Meier","id":"344","first_name":"Torsten"},{"first_name":"J.","last_name":"Hader","full_name":"Hader, J."},{"first_name":"M.","full_name":"Koch, M.","last_name":"Koch"},{"full_name":"Rossi, F.","last_name":"Rossi","first_name":"F."},{"last_name":"Linder","full_name":"Linder, N.","first_name":"N."}],"year":"1997","title":"Microscopic theory of the intracollisional field effect in semiconductor superlattices","abstract":[{"text":"A detailed analysis of the optical and transport properties of semiconductor superlattices in the high-field regime is presented. Electronic Bloch oscillations and the resulting terahertz emission signals are computed including phonon damping in the presence of the electric field. The modifications of the phonon-induced terahertz signal decay are analyzed including the movement of the carriers in the field (intracollisional field effect). For elevated fields it is shown that the interplay between electric field and electron-phonon interaction leads to resonance structures in the terahertz damping rate.","lang":"eng"}],"extern":"1","publication":"Physical Review B","page":"13799-13807","issue":"20","language":[{"iso":"eng"}],"intvolume":"        55","date_updated":"2023-04-05T11:39:06Z"}