{"author":[{"id":"344","first_name":"Torsten","last_name":"Meier","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072"},{"full_name":"von Plessen, G.","last_name":"von Plessen","first_name":"G."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"}],"main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.51.14490"}],"doi":"10.1103/PhysRevB.51.14490","date_created":"2023-04-14T22:49:22Z","publication_status":"published","department":[{"_id":"293"}],"volume":51,"date_updated":"2023-04-14T22:49:25Z","intvolume":"        51","issue":"20","extern":"1","abstract":[{"lang":"eng","text":"Coherent effects are analyzed that are induced by homogeneous electric fields in photoexcited semiconductors. Extended semiconductor Bloch equations are presented, which include the applied electric field, in addition to the many-body Coulomb contributions in the time-dependent Hartree-Fock approximation. These equations are solved for a one-dimensional tight-binding model of a semiconductor superlattice. Linear and nonlinear optical signals associated with the coherent field-induced effects are calculated. For the case of a static electric field, the influence of the Coulomb interaction, which is treated on the Hartree-Fock level for a contact potential approximation, on the Bloch oscillations, and on their counterpart in the frequency domain, the Wannier-Stark-ladder, is analyzed. For a time-dependent electric field, dynamic localization, i.e., the localization of electrons due to an oscillating electric field, is analyzed. It is predicted that the dynamic localization should be observable in semiconductor superlattices even in the presence of Coulomb interaction."}],"title":"Coherent effects induced by static and time-dependent electric fields in semiconductors","year":"1995","user_id":"49063","_id":"43578","status":"public","citation":{"ama":"Meier T, von Plessen G, Thomas P, Koch SW. Coherent effects induced by static and time-dependent electric fields in semiconductors. <i>Physical Review B</i>. 1995;51(20):14490-14497. doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">10.1103/PhysRevB.51.14490</a>","bibtex":"@article{Meier_von Plessen_Thomas_Koch_1995, title={Coherent effects induced by static and time-dependent electric fields in semiconductors}, volume={51}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">10.1103/PhysRevB.51.14490</a>}, number={20}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and von Plessen, G. and Thomas, P. and Koch, S.W.}, year={1995}, pages={14490–14497} }","ieee":"T. Meier, G. von Plessen, P. Thomas, and S. W. Koch, “Coherent effects induced by static and time-dependent electric fields in semiconductors,” <i>Physical Review B</i>, vol. 51, no. 20, pp. 14490–14497, 1995, doi: <a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">10.1103/PhysRevB.51.14490</a>.","short":"T. Meier, G. von Plessen, P. Thomas, S.W. Koch, Physical Review B 51 (1995) 14490–14497.","apa":"Meier, T., von Plessen, G., Thomas, P., &#38; Koch, S. W. (1995). Coherent effects induced by static and time-dependent electric fields in semiconductors. <i>Physical Review B</i>, <i>51</i>(20), 14490–14497. <a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">https://doi.org/10.1103/PhysRevB.51.14490</a>","mla":"Meier, Torsten, et al. “Coherent Effects Induced by Static and Time-Dependent Electric Fields in Semiconductors.” <i>Physical Review B</i>, vol. 51, no. 20, American Physical Society, 1995, pp. 14490–97, doi:<a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">10.1103/PhysRevB.51.14490</a>.","chicago":"Meier, Torsten, G. von Plessen, P. Thomas, and S.W. Koch. “Coherent Effects Induced by Static and Time-Dependent Electric Fields in Semiconductors.” <i>Physical Review B</i> 51, no. 20 (1995): 14490–97. <a href=\"https://doi.org/10.1103/PhysRevB.51.14490\">https://doi.org/10.1103/PhysRevB.51.14490</a>."},"publisher":"American Physical Society","type":"journal_article","page":"14490-14497","language":[{"iso":"eng"}],"publication":"Physical Review B"}