{"citation":{"short":"T. Meier, J. Feldmann, G. von Plessen, P. Thomas, E.O. Göbel, K.W. Goosen, D.A.B. Miller, J.E. Cunningham, in: R.T. Phillips (Ed.), Coherent Optical Interactions in Semiconductors, Springer-Science+Business Media, New York, 1994, pp. 223–244.","ama":"Meier T, Feldmann J, von Plessen G, et al. Vertical transport studied by sub-picosecond four-wave mixing experiments. In: Phillips RT, ed. Coherent Optical Interactions in Semiconductors. NATO ASI Series B330. Springer-Science+Business Media; 1994:223-244. doi:10.1007/978-1-4757-9748-0_10","ieee":"T. Meier et al., “Vertical transport studied by sub-picosecond four-wave mixing experiments,” in Coherent Optical Interactions in Semiconductors, R. T. Phillips, Ed. New York: Springer-Science+Business Media, 1994, pp. 223–244.","bibtex":"@inbook{Meier_Feldmann_von Plessen_Thomas_Göbel_Goosen_Miller_Cunningham_1994, place={New York}, series={NATO ASI Series B330}, title={Vertical transport studied by sub-picosecond four-wave mixing experiments}, DOI={10.1007/978-1-4757-9748-0_10}, booktitle={Coherent Optical Interactions in Semiconductors}, publisher={Springer-Science+Business Media}, author={Meier, Torsten and Feldmann, J. and von Plessen, G. and Thomas, P. and Göbel, E.O. and Goosen, K.W. and Miller, D.A.B. and Cunningham, J.E.}, editor={Phillips, R.T.}, year={1994}, pages={223–244}, collection={NATO ASI Series B330} }","chicago":"Meier, Torsten, J. Feldmann, G. von Plessen, P. Thomas, E.O. Göbel, K.W. Goosen, D.A.B. Miller, and J.E. Cunningham. “Vertical Transport Studied by Sub-Picosecond Four-Wave Mixing Experiments.” In Coherent Optical Interactions in Semiconductors, edited by R.T. Phillips, 223–44. NATO ASI Series B330. New York: Springer-Science+Business Media, 1994. https://doi.org/10.1007/978-1-4757-9748-0_10.","mla":"Meier, Torsten, et al. “Vertical Transport Studied by Sub-Picosecond Four-Wave Mixing Experiments.” Coherent Optical Interactions in Semiconductors, edited by R.T. Phillips, Springer-Science+Business Media, 1994, pp. 223–44, doi:10.1007/978-1-4757-9748-0_10.","apa":"Meier, T., Feldmann, J., von Plessen, G., Thomas, P., Göbel, E. O., Goosen, K. W., Miller, D. A. B., & Cunningham, J. E. (1994). Vertical transport studied by sub-picosecond four-wave mixing experiments. In R. T. Phillips (Ed.), Coherent Optical Interactions in Semiconductors (pp. 223–244). Springer-Science+Business Media. https://doi.org/10.1007/978-1-4757-9748-0_10"},"publisher":"Springer-Science+Business Media","type":"book_chapter","_id":"43598","status":"public","year":"1994","user_id":"49063","editor":[{"last_name":"Phillips","full_name":"Phillips, R.T.","first_name":"R.T."}],"publication":"Coherent Optical Interactions in Semiconductors","page":"223-244","language":[{"iso":"eng"}],"department":[{"_id":"293"}],"date_created":"2023-04-14T23:50:07Z","doi":"10.1007/978-1-4757-9748-0_10","publication_status":"published","author":[{"orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","first_name":"Torsten","id":"344"},{"first_name":"J.","last_name":"Feldmann","full_name":"Feldmann, J."},{"first_name":"G.","last_name":"von Plessen","full_name":"von Plessen, G."},{"last_name":"Thomas","full_name":"Thomas, P.","first_name":"P."},{"last_name":"Göbel","full_name":"Göbel, E.O.","first_name":"E.O."},{"first_name":"K.W.","full_name":"Goosen, K.W.","last_name":"Goosen"},{"full_name":"Miller, D.A.B.","last_name":"Miller","first_name":"D.A.B."},{"first_name":"J.E.","full_name":"Cunningham, J.E.","last_name":"Cunningham"}],"main_file_link":[{"url":"https://link.springer.com/chapter/10.1007/978-1-4757-9748-0_10"}],"publication_identifier":{"isbn":["978-1-4757-9750-3"]},"title":"Vertical transport studied by sub-picosecond four-wave mixing experiments","extern":"1","abstract":[{"text":"Since the realization of semiconductor heterostructures vertical transport of electrically injected carriers has been one of the most interesting topics in semiconductor physics. Precise engineering of semiconductor layers and thus electronic energy levels allows the tailoring of transport properties over a wide range and has even led to the invention of semiconductor devices relying on ballistic electron transport. In addition, negative differential resistance (NDR) can be realized by using tunneling diodes containing double-barrier heterostructures or a superlattice structure.5,6 Actually, the proposal of Esaki and Tsu5 to use electronic Bloch oscillations in the miniband of a semiconductor superlattice to realize NDR marked the starting point for the physics and applications of semiconductor heterostructures.","lang":"eng"}],"series_title":"NATO ASI Series B330","place":"New York","date_updated":"2023-04-14T23:50:10Z"}