{"publication_status":"published","date_created":"2023-04-24T06:11:47Z","status":"public","_id":"44121","main_file_link":[{"url":"https://opg.optica.org/abstract.cfm?uri=qels-2005-JTuC92"}],"user_id":"49063","publication_identifier":{"isbn":["1-55752-770-9"]},"author":[{"orcid":"0000-0001-8864-2072","first_name":"Torsten","id":"344","full_name":"Meier, Torsten","last_name":"Meier"},{"last_name":"Schlichenmaier","full_name":"Schlichenmaier, C.","first_name":"C."},{"first_name":"A.","last_name":"Thränhardt","full_name":"Thränhardt, A."},{"first_name":"H.","last_name":"Grüning","full_name":"Grüning, H."},{"first_name":"Peter J.","last_name":"Klar","full_name":"Klar, Peter J."},{"first_name":"Wolfram","last_name":"Heimbrodt","full_name":"Heimbrodt, Wolfram"},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."},{"last_name":"Chow","full_name":"Chow, Weng W.","first_name":"Weng W."},{"full_name":"Hader, J.","last_name":"Hader","first_name":"J."},{"last_name":"Moloney","full_name":"Moloney, Jerome V.","first_name":"Jerome V."}],"year":"2005","type":"conference","publisher":"Optical Society of America","citation":{"chicago":"Meier, Torsten, C. Schlichenmaier, A. Thränhardt, H. Grüning, Peter J. Klar, Wolfram Heimbrodt, S.W. Koch, Weng W. Chow, J. Hader, and Jerome V. Moloney. “Analysis of Dilute Nitride Semiconductor Laser Gain Materials in the 1.3-1.5/Spl Mu/m Range.” In <i> Quantum Electronics and Laser Science Conference</i>. Optical Society of America, 2005.","mla":"Meier, Torsten, et al. “Analysis of Dilute Nitride Semiconductor Laser Gain Materials in the 1.3-1.5/Spl Mu/m Range.” <i> Quantum Electronics and Laser Science Conference</i>, JTuC92, Optical Society of America, 2005.","short":"T. Meier, C. Schlichenmaier, A. Thränhardt, H. Grüning, P.J. Klar, W. Heimbrodt, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, in:  Quantum Electronics and Laser Science Conference, Optical Society of America, 2005.","ama":"Meier T, Schlichenmaier C, Thränhardt A, et al. Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range. In: <i> Quantum Electronics and Laser Science Conference</i>. Optical Society of America; 2005.","apa":"Meier, T., Schlichenmaier, C., Thränhardt, A., Grüning, H., Klar, P. J., Heimbrodt, W., Koch, S. W., Chow, W. W., Hader, J., &#38; Moloney, J. V. (2005). Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range. <i> Quantum Electronics and Laser Science Conference</i>, Article JTuC92. Quantum Electronics and Laser Science Conference 2005, Baltimore, Maryland United States.","ieee":"T. Meier <i>et al.</i>, “Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range,” presented at the Quantum Electronics and Laser Science Conference 2005, Baltimore, Maryland United States, 2005.","bibtex":"@inproceedings{Meier_Schlichenmaier_Thränhardt_Grüning_Klar_Heimbrodt_Koch_Chow_Hader_Moloney_2005, title={Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range}, number={JTuC92}, booktitle={ Quantum Electronics and Laser Science Conference}, publisher={Optical Society of America}, author={Meier, Torsten and Schlichenmaier, C. and Thränhardt, A. and Grüning, H. and Klar, Peter J. and Heimbrodt, Wolfram and Koch, S.W. and Chow, Weng W. and Hader, J. and Moloney, Jerome V.}, year={2005} }"},"article_number":"JTuC92","department":[{"_id":"293"}],"language":[{"iso":"eng"}],"date_updated":"2023-04-24T06:11:49Z","title":"Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range","conference":{"start_date":"2005-05-22","location":"Baltimore, Maryland United States","name":"Quantum Electronics and Laser Science Conference 2005","end_date":"2005-05-27"},"extern":"1","abstract":[{"text":"Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1−x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range.","lang":"eng"}],"publication":" Quantum Electronics and Laser Science Conference"}