{"issue":"14","publication_status":"published","doi":"10.1063/1.3488812","article_number":"143101","abstract":[{"lang":"eng","text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices."}],"date_created":"2018-09-20T12:38:51Z","language":[{"iso":"eng"}],"article_type":"original","publication":"Applied Physics Letters","type":"journal_article","date_updated":"2022-01-06T07:01:09Z","publisher":"AIP Publishing","author":[{"first_name":"M.","full_name":"Mehta, M.","last_name":"Mehta"},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"last_name":"Michaelis de Vasconcellos","full_name":"Michaelis de Vasconcellos, S.","first_name":"S."},{"first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","id":"606","last_name":"Zrenner"},{"last_name":"Meier","id":"20798","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik"}],"intvolume":" 97","status":"public","year":"2010","citation":{"short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812.","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010."},"user_id":"20798","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"_id":"4550","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","volume":97}