{"publication":"Journal of Alloys and Compounds","extern":"1","title":"Mimicking synaptic plasticity and learning behaviours in solution processed SnO2 memristor","date_updated":"2023-07-11T16:40:31Z","language":[{"iso":"eng"}],"intvolume":" 757","page":"496-503","volume":757,"publisher":"Elsevier BV","keyword":["Materials Chemistry","Metals and Alloys","Mechanical Engineering","Mechanics of Materials"],"type":"journal_article","citation":{"short":"Y. Pan, T. Wan, H. Du, B. Qu, D. Wang, T.-J. Ha, D. Chu, Journal of Alloys and Compounds 757 (2018) 496–503.","bibtex":"@article{Pan_Wan_Du_Qu_Wang_Ha_Chu_2018, title={Mimicking synaptic plasticity and learning behaviours in solution processed SnO2 memristor}, volume={757}, DOI={10.1016/j.jallcom.2018.05.092}, journal={Journal of Alloys and Compounds}, publisher={Elsevier BV}, author={Pan, Ying and Wan, Tao and Du, Haiwei and Qu, Bo and Wang, Danyang and Ha, Tae-Jun and Chu, Dewei}, year={2018}, pages={496–503} }","ieee":"Y. Pan et al., “Mimicking synaptic plasticity and learning behaviours in solution processed SnO2 memristor,” Journal of Alloys and Compounds, vol. 757, pp. 496–503, 2018, doi: 10.1016/j.jallcom.2018.05.092.","ama":"Pan Y, Wan T, Du H, et al. Mimicking synaptic plasticity and learning behaviours in solution processed SnO2 memristor. Journal of Alloys and Compounds. 2018;757:496-503. doi:10.1016/j.jallcom.2018.05.092","mla":"Pan, Ying, et al. “Mimicking Synaptic Plasticity and Learning Behaviours in Solution Processed SnO2 Memristor.” Journal of Alloys and Compounds, vol. 757, Elsevier BV, 2018, pp. 496–503, doi:10.1016/j.jallcom.2018.05.092.","chicago":"Pan, Ying, Tao Wan, Haiwei Du, Bo Qu, Danyang Wang, Tae-Jun Ha, and Dewei Chu. “Mimicking Synaptic Plasticity and Learning Behaviours in Solution Processed SnO2 Memristor.” Journal of Alloys and Compounds 757 (2018): 496–503. https://doi.org/10.1016/j.jallcom.2018.05.092.","apa":"Pan, Y., Wan, T., Du, H., Qu, B., Wang, D., Ha, T.-J., & Chu, D. (2018). Mimicking synaptic plasticity and learning behaviours in solution processed SnO2 memristor. Journal of Alloys and Compounds, 757, 496–503. https://doi.org/10.1016/j.jallcom.2018.05.092"},"year":"2018","author":[{"id":"100383","first_name":"Ying","last_name":"Pan","full_name":"Pan, Ying"},{"full_name":"Wan, Tao","last_name":"Wan","first_name":"Tao"},{"first_name":"Haiwei","last_name":"Du","full_name":"Du, Haiwei"},{"full_name":"Qu, Bo","last_name":"Qu","first_name":"Bo"},{"last_name":"Wang","full_name":"Wang, Danyang","first_name":"Danyang"},{"full_name":"Ha, Tae-Jun","last_name":"Ha","first_name":"Tae-Jun"},{"full_name":"Chu, Dewei","last_name":"Chu","first_name":"Dewei"}],"publication_identifier":{"issn":["0925-8388"]},"user_id":"100383","doi":"10.1016/j.jallcom.2018.05.092","date_created":"2023-07-11T14:48:35Z","publication_status":"published","_id":"46005","status":"public"}