[{"language":[{"iso":"eng"}],"doi":"10.1002/pssb.202300034","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"full_name":"Littmann, Mario","last_name":"Littmann","first_name":"Mario"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"id":"14","last_name":"As","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef"}],"title":"Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy","year":"2023","intvolume":"       260","date_updated":"2023-07-25T08:07:20Z","publication_status":"published","date_created":"2023-07-25T08:06:13Z","department":[{"_id":"15"},{"_id":"230"}],"keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","publication":"physica status solidi (b)","issue":"7","_id":"46132","publisher":"Wiley","volume":260,"user_id":"42514","status":"public","citation":{"chicago":"Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i> 260, no. 7 (2023). <a href=\"https://doi.org/10.1002/pssb.202300034\">https://doi.org/10.1002/pssb.202300034</a>.","short":"M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).","apa":"Littmann, M., Reuter, D., &#38; As, D. J. (2023). Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. <i>Physica Status Solidi (b)</i>, <i>260</i>(7). <a href=\"https://doi.org/10.1002/pssb.202300034\">https://doi.org/10.1002/pssb.202300034</a>","ieee":"M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” <i>physica status solidi (b)</i>, vol. 260, no. 7, 2023, doi: <a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>.","ama":"Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. <i>physica status solidi (b)</i>. 2023;260(7). doi:<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>","bibtex":"@article{Littmann_Reuter_As_2023, title={Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy}, volume={260}, DOI={<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Littmann, Mario and Reuter, Dirk and As, Donat Josef}, year={2023} }","mla":"Littmann, Mario, et al. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i>, vol. 260, no. 7, Wiley, 2023, doi:<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>."}}]